In the Microwave Power Devices group, the main activities regards devices based on wide bandgap semiconductors (mainly GaN) dédicated to micowave power applications and power electronics. Other activities are developed in the frame of the common laboratory IEMN/ST MICROELECTRONICS (BiCMOS, HBT Si/Ge…).
Some main recent activities are the following:
- AlGaN/GaN HEMT thermal modeling and characterization
- Measurement above 110GHz
- Modelling of GaN-HEMT for high efficiency power converters
- Nanoribbon-channel AlGaN/GaN HEMTs
- New technological routes to improve thermal managements in GaN HEMTs
- Power performance at 40GHz of AlGaN/GaN HEMTs on silicon substrate
- Temperature monitoring of operating AlGaN/GaN HEMTs
English (UK) 
Français