Christophe GAQUIÈRE received the Ph.D. degree in electronic from the University of Lille in 1995. He is currently full professor at the University of Lille (Polytech’Lille), and carries out his research activity at the Institut d’Electronique de Microélectronique et de Nanotechnology (IEMN).

The topics concern design, fabrication, characterization and modeling of HEMT’s and HBT devices. He works on GaAs, InP, metamorphic HEMT’s and now he is involved in the GaN activities. His main activities are microwave characterizations (small and large signal between 1 and 500 GHz) in order to correlate the microwave performances with the technological and topology parameters. Today, his activities concern mainly the investigation of two-dimensional electronic plasmons and gunn like effects for THz solid state GaN based detectors and emitters (HEMT and SSD), AlGaN/GaN nano-wires for microwave applications and MEMS activities based also on GaN. He was responsible for the microwave characterization part of the common laboratory between Thales TRT and IEMN focus on wide band gap semiconductor (GaN, SiC, and Diamond) from 2003 up to 2007. He is in the TPC of several European conferences. At the present time he has in charge the Silicon millimeter wave advanced technologies part of the common lab between ST microelectronics and IEMN. Christophe Gaquière is the author or co-author of more than 150 publications and 300 communications. Besides, he created with former phd students MC2-technologies in March 2014. He is Chief Technical Officer (CTO). This spin off from IEMN is focused on characterization, modeling and design of microwave circuits and systems, the realization of radar development study and the manufacture and marketing of products such as microwave power amplifiers, low noise amplifier, mixers or still linear and non-linear characterizations benches. The R & D activities are focused on two areas: The development of radiometric sensors to design microwave radiometric cameras dedicated to the port and airport security applications. The second part is focused on the development of monolithic microwave circuits for radar applications.