Responsible : Mohammed ZAKNOUNE
Members : Sylvain Bollaert (Pr), A. Cappy (Pr), François Danneville (Pr),
Gilles Dambrine (Pr), Yannick Roelens (MdC), Nicolas Wichmann (MdC),
Mohammed Zaknoune (DR).
First, the group aims the THz domain by developing technologies of transistors and dipoles for THz applications and THz telecommunications. Transistor performances are now well beyond 1/2 THz for the FET (HEMT) and the HBT (Bipolar Transistor). Dipoles also address THz applications with the generation by using the multiplication principle based on Schottky diode and the photo-diode conversion based on Uni-Travelling-Carrier diode (UTC) (in collaboration with Photonique THz group from IEMN). Two projects have been started whose the objectives is high power generation up to 0.5 THz using GaN multiplier. A state of the art result has been obtained for an UTC with 700 µW at 300 GHz. We did the first demonstration of a single 100 Gbit/s THz channel. A second part of activity focuses on « The end of Moore’s law » which addresses the problem of the computing power consumption. We have developed 3 technologies, the III-V MOSFET, the III-V IMOS and the III-V Tunnel FET. Furthermore, a bio-inspired hardware activity has started due to the big interest for analogue computing and because it allows a drastic reduction of consumption while showing cognitive properties. A third part of activity focuses on nano-characterisation; we have developed an ultra compact nano-probe dedicated to the characterisation of nano-devices.
_Poster ANODE (Nanoscale components and devices)