Responsible : Mohammed ZAKNOUNE
Members Sylvain Bollaert (Pr), François Danneville (Pr),
Gilles Dambrine (Pr), Yannick Roelens (MdC), Nicolas Wichmann (MdC), Mahmoud Abou Daher (MdC)
Mohammed Zaknoune (DR),
Research Highlights
Firstly, the group is targeting the THz field by developing transistor and dipole technologies for THz applications and THz telecommunications. Transistor performance is now well beyond 1/2 THz for the FET (HEMT) and the HBT (Bipolar Transistor). Dipoles are also being used for THz applications, with generation using the multiplication principle based on the Schottky diode and photo-diode conversion based on the Uni-Travelling-Carrier diode (UTC) (in collaboration with the IEMN THz Photonics group). Two projects have been launched with the aim of generating high power up to 0.5 THz using a GaN multiplier. A state-of-the-art result was obtained for a 700 µW UTC at 300 GHz. We carried out the first demonstration of a single 100 Gbit/s THz channel. A second part of the activity focuses on "The end of Moore's Law", which tackles the problem of computer power consumption. A bio-inspired hardware activity is carried out in the group because of the great interest in analogue computing and because it allows a drastic reduction in consumption while at the same time presenting cognitive properties. A third part of the activity focuses on nano-characterisation; we have developed an ultra-compact nanoprobe dedicated to the characterisation of nanodevices.
