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GROUPE DE RECHERCHE : PUISSANCE
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Modelling of GaN-HEMT for high efficiency power converters

A novel methodology combining both Sij measurements (usually dedicated to low power and high frequency devices) and high voltage/high current probes is being developed to provide accurate non-linear thermo-electrical models of AlGaN/GaN power switches [1-2]. It is targeted to take benefit of this new process flow and subsequent reliable models to design power converters with switching frequency up to 1MHz-10MHz. These operating conditions make it possible to downscale substantially the circuits needed for DC-DC conversion while maintaining excellent efficiency. The very first results are very encouraging since a complete non-linear model, taking into account the device self-heating, has been proposed and validated through many measurement at the device and the circuit levels.

Fig.6a: Experimental high voltage/current S-parameters test bench

Fig.6a: Experimental high voltage/current S-parameters test bench

 Fig. 6b: Extracted capacitances versus voltage at 10 MHz

Fig. 6b: Extracted capacitances versus voltage at 10 MHz

In this context, a set of new characterization circuits were designed and fabricated, such as high voltage / high current bias tees, coaxial open and short standards and associated small-signal equivalent parameters. The double pulse technique was implemented at the circuit level to validate both the transistor model and the electromagnetic behavior of the PCB routes at such high frequency and current values. These models will be used for the fabrication of hybrid convertors in collaboration with L2EP.

In the future integrated convertors are envisaged. For this purpose, normally-off transistors and passive element such as inductances operating at high frequency and withstanding high current will be developed.


[1] PACE L. et al, PCIM Europe Conference, Nuremberg, Germany, June 2018
[2] PACE L. et al, SGE, Nancy, France, July, 2018

PUISSANCE Group : OTHER ACTIVITIES

  • AlGaN/GaN HEMT thermal modeling and characterization
  • Measurement above 110GHz
  • Nanoribbon-channel AlGaN/GaN HEMTs
  • New technological routes to improve thermal managements in GaN HEMTs
  • Power performance at 40GHz of AlGaN/GaN HEMTs on silicon substrate
  • Temperature monitoring of operating AlGaN/GaN HEMTs

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        • AlGaN/GaN HEMT thermal modeling and characterization
        • Measurement above 110GHz
        • Modelling of GaN-HEMT for high efficiency power converters
        • Nanoribbon-channel AlGaN/GaN HEMTs
        • New technological routes to improve thermal managements in GaN HEMTs
        • Power performance at 40GHz of AlGaN/GaN HEMTs on silicon substrate
        • Temperature monitoring of operating AlGaN/GaN HEMTs
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