Nanostructured Materials and Components Department

Growth and characterization of 1D and 2D semiconductor heterostructures

- Molecular beam epitaxy (MBE) growth and physical characterization of III-V semiconductor-based heterostructures for opto- and microelectronic applications and for mesoscopic physics.

- Selective growth of planar 1D nanostructures of III-V materials (InGaAs, InAs, InSb...) by molecular beam epitaxy.

- Molecular beam epitaxy of 2D materials (graphene, hBN and transition metal dichalcogenides)

Suspended InAs nanowire (Nanotechnology 2019, DOI: 10.1088/1361-6528/aaebbd)

► EPIPHY Group

Transport phenomena, optoelectronic/photovoltaic properties and theoretical studies of semiconductor nanostructures

STM images of InAs nanowire (Nanoletters 2019, DOI: 10.1021/acs.nanolett.9b03584)

- Theoretical and experimental spectroscopic studies of 0D semiconductor nanostructures in order to probe their electronic, optical and photovoltaic properties at the single nanoparticle level, including near field microscopy (STM, AFM/EFM/KFM) and transport properties of Si and III-V nanowires.

- Theoretical study of electronic structure and heat transport in 1D nanostructures (semiconductor nanowires, carbon and boron nitride nanotubes) for ultimate electronic components.

► Physique Group / Teams Namaste, Physics of Nanostructures & Quantum Devices and Electrostatics and Physics of Nanosructures

Nanostructures for organic and molecular electronics

- Physics of nanostructures based on organic materials and/or hybrid systems involving organic molecules, polymers, oxides, metallic and/or semiconductor nanostructures.

Negative index lens device

► NCM Group

Design and characterization of metamaterials

- Design, fabrication and characterization of devices using metamaterial technologies. The spectrum of these devices ranges from microwaves to optics through the terahertz bands.

► Groupe SubLambda

Phononics/Phoxonics, plasmonics and nanoacoustics in micro and nanostructured materials

- Theoretical study of acoustic wave propagation in phononic crystals and phonon-phonon interaction in phoXonic cavities and waveguides.
- Theory of surface plasmon-polariton propagation and filtering in metal-insulator waveguides; localized surface plasmon resonance in gold nanostructure arrays for biosensor applications.
- Experimental characterization of mechanical properties of thin films and vibrations of nano-objects by picosecond acoustics.

►Physique Group / Equipe EPHONI and Nanoacoustics

► Physique Group / Equipe Nanoacoustique and Nanoacoustics

Physical simulation of electronic and optoelectronic devices

Basic physics of materials, semiconductors or ferroelectrics, used in electronics and optoelectronics to the modeling of devices or even small circuits.

► Molecular, organic and bio-inspired components

Design, manufacture and study of functional molecular components, organic electrochemical transistors, molecular-based sensors, organic transistors, rectification diodes based on organic materials, molecular memories and switches, memristors, synapstors (transistor-synapse) for neuro-inspired architectures and interfacing with biological signals.

Modelling a THz device

► Mesoscopic and tunneling devices based on III-V nanostructures

In-plane NW-based transistors

https://doi.org/10.1007/s12274-019-2572-8

In-plane NW-base tunnel junctions

https://dx.doi.org/10.1088/1361-6528/ac45c5

► NCM Group

For theoretical and simulation studies, the main techniques used are

• Multi-scale and finite element simulation (COMSOL, Netgen/NGSolve)
• Molecular dynamics for the analysis of molecule-surface interactions
• Semi-empirical (strong bonds) and ab-initio (DFT) methods applied to the electronic structure of nanostructures and interfaces between semiconductors and oxides with high lattice disagreement
• Boltzmann's equation and Green's function methods for electronic transport

From an experimental point of view, we benefit from important technical means coming for the most part from the IEMN platforms:

• 3 EJM reactors dedicated to the epitaxy of III-V semiconductors, graphene/hBN and transition metal dichalcogenides
• 2 CVD furnaces for the growth of graphene on metals and Si/Ge based nanowires, a surface analysis equipment (ESCA)
• 8 near field microscopes (4 systems under ambient atmosphere and 4 systems under UHV)
• A µ-photoluminescence & Raman bench
• 1 cryostat for low temperature electrical measurements under magnetic field
• A picosecond acoustic bench
• A platform for organic components and materials (3 glove boxes for solution or vacuum deposition and electrical measurements)
• A chemistry laboratory for organic synthesis.