Jean-Claude DE JAEGER joined the Active Components Group of the Centre Hyperfréquences et semiconducteurs (CHS) at the University of  Lille, Villeneuve d’Ascq, France in 1974. He received the third cycle Doctorat degree in 1977 and the doctorat in physics degree in 1985 both from the University of Lille.

He is currently Professor of electronics at the University of Lille. From 1990 to 1999, he was head of the Physical Simulation Devices group at the Institut d’Electronique et de Microélectronique et de Nanotechnologie (IEMN) of the University of Lille. He worked on physical modeling and analysis of III-V Field-Effect Transistors for power applications and mixers.

Since 1999, he is head of the Microwave Power Devices research group at IEMN working with a lot of industrial and academic partners in the different countries of Europe and north America via french national and European projects. Current research and developed projects concern the simulation, the design, the fabrication and the measurement of microwave power HEMTs based on GaAs, InP and mainly GaN, working from 3 to 94 GHz as well as devices based on wide bandgap semiconductors such as BN, AlN and diamond. In this frame, tunneling resonant diodes, photodetectors, convertors, sensors, cantilevers… are currently designed and fabricated. Other activities regard HEMTs on GaN substrate, transistors reported on high thermal conductive substrates, tri-gate transistors and temperature monitoring of operating AlGaN/GaN HEMTs.

In the frame of a collaboration with the Laboratoire d’Electrotechnique et d’Electronique de Puissance (L2EP) of Lille University, he is also working on power electronics based on GaN semiconductor.

From 2002 to 2007, he was also deputy manager of  Thales Iemn GaN Electronics Research (TIGER), a common laboratory between IEMN and ALCATEL – THALES III-V Lab, working on wide bandgap semiconductors for microwave power applications in S and X bands.

He is currently head of the axis dedicated to advanced high frequency electronics devices (RF, THz, single electron devices, resonant tunel diode…)  in the labex GaNeX.

He is the author or a co-author of about 360 publications and communications.