Three molecular beam epitaxy (MBE) chambers are running at IEMN. One is dedicated to III-V material growth, one to transition metal dichalcogenide studies. Both are coupled together with the ESCA analysis chamber under ultra-high-vacuum. The third one is concerned with graphene/hBN growth experiments. Two chemical vapor deposition systems are also available, dedicated either to the growth of Si and Ge nanowires or to graphene on metals.
Numerous characterization tools are also available, to give information about structural (X-ray diffractometer, atomic force microscope and scanning electron microscope), surface (ESCA), electrical (Hall effect) and optical properties (micro-photoluminescence and Raman), as well as two coupled thermogravimetry and mass spectroscopy analysis tools.
All these equipments are part of Renatech, the french network of high-end facilities in the field of micro & nanotechnologies. They might be used to carry out research, by academia or industrial partners, national r international.