Scientific themes

The first research theme of the PUISSANCE team concerns the development of active devices based on wide bandgap semiconductors:

• Development of AlGaN/GaN HEMTs for microwave power applications up to G band. (Fabrication, characterisation and electrical and microwave modelling, thermal characterisation of devices on Si, SiC, SiC-Si composite and GaN substrates).
• Beginning of activities concerning new barrier materials such as ScAlN for increasing the frequency and power of HEMT devices up to 94 GHz.
• Activity in power electronics: characterisation based on S parameters, electro-thermal modelling, design and manufacture of high-efficiency DC-DC converters on GaN (collaboration with L2EP at the University of Lille).
• Development of THz detectors based on GaN-based GUNN diodes.

The second activity of the PUISSANCE team is based on silicon devices (HBT SiGe, BiCMOS) as part of the joint laboratory between the IEMN and ST MICROELECTRONICS.

• Development of a fully integrated VNA and a load-pull characterisation bench on silicon in the 140-220 and 220-325 GHz frequency range
• Determination of HBT SiGe:C power results at 94 GHz and beyond