In the Microwave Power Devices group (PUISSANCE) at IEMN, one of the main objectives consist to develop active devices based on wide band gap semiconductors such as GaN, AlGaN, InAlN, BN, AlN and Diamond.
- Activities regarding AlGaN/GaN HEMTs, InAl(Ga)N/GaN HEMTs and AlGaN/GaN/BGaN HEMTs for microwave power applications up to W band: devices on silicon substrate, on GaN substrate or reported on high conductive substrate
- Activities based on nanoribbons or nanowires transistors performed from top-down or bottom-up approaches
- Devices based on wide bandgap materials such as Resonant Tunneling Diodes, DUV Photodetectors, Actuators…
- Power electronics in the frame of a collaboration with the laboratoire d’Electrotechnique et d’Electronique de Puissance de Lille (L2EP): design, modeling and fabrication of DC–DC Converters based on GaN semiconductor.
- THz detectors development based on HEMTs or SSD (Self Switching Diodes) AlN/GaN or AlGaN/GaN structures
- AlGaN/GaN HEMT thermal modeling, thermal characterization and temperature monitoring of operating AlGaN/GaN HEMTs
Another activity is based on silicon devices (HBT SiGe, BiCMOS) based in the frame of a common laboratory between IEMN and ST MICROELECTRONICS:
- The evolution of silicon technologies now makes it possible the development of many applications in the millimeter and submillimeter areas. Hence, fully integrated VNA or load-pull characterization bench on silicon in order to be as close as possible to the device to characterize are under development in the frequency range of 140-220 and 220-325 GHz (G and J bands)
- Determination of HBT SiGe:C power results at 94 GHz
The activities are based on three complementary scientific domains:
- Technological processing where the different steps are optimized.
- Electrical and microwave measurements where specific benches are developed (e.g. pulse and load pull setups).
- Non linear models for circuits design and physical simulation where in house models are developed.
The scientific research is shared between advanced topics and projects strongly connected to the needs of industry. In a very competitive research field, studied since several years by the most famous laboratories all around the world in USA, Europe and Japan, state of the art results were obtained by the group.
The activity of the Microwave Power Devices group is developed in the frame of numerous scientific projects in collaboration with industrial companies and universities all over the different countries in Europe showing thankfulness for the expert appraisement domains of the group.