The research activity of the Epiphy group is focused on the growth and characterization of materials for microelectronics and optoelectronics applications and covers 3 main areas:

• III-V semiconductor heterostructures and nanostructures
• 2D material epitaxy including graphene, hBN, transition metal dichalcogenides and their heterostructures
• Carbon-based materials for electromagnetic waves absorption

Growth relies on 3 Molecular Beam Epitaxy and 2 Chemical Vapor Deposition reactors. Characterization is achieved via triple X-ray diffraction, micro-photoluminescence, Raman spectroscopy, Hall effect, optical, atomic force and scanning electron microscopies. Furthermore, the group performs physico-chemical characterizations via photoelectron spectroscopies (XPS/UPS) for his needs and those of the whole Institute. In each field, the main objectives are:

• physical and chemical characterization of heterostructures
• understanding of growth mechanisms at hand in hetero-epitaxy
• mastering new process or material heterostructures for advanced devices

Within IEMN, Epiphy has strong collaborations with other groups working on device fabrication and characterization and on more fundamental studies, such as the Anode, Carbon, Photonics THz and Physics groups. To a less extent, the surface characterization and the Raman spectroscopy activities stimulate interactions with the BIOMEMS, CSAM, MICROELEC Si, NBI and NCM groups.

Poster EPIPHY (Epitaxie et Physique des hétérostructures)