ESA European Contract (European Space Agency)
ESA European Contract (European Space Agency)
Duration: 2022
Coordinator : Farid Medjdoub
Objectives:
The proposed work aims to assess and quantify performances of new materials and device topologies of mmW GaN-based transistors allowing frequency extension up to W-band with the aim of achieving new stretch targets, especially in terms of ways to improve both power-added-efficiency and linearity. The novelty lies on an extensive survey of advanced concepts studied worldwide with respect to the whole figure of merits while including theoretical investigations of the most promising concepts based on TCAD simulations and checking the manufacturability of each approach with main EU epi-suppliers and foundries. The outputs from this study will allow ESA to focus its future GaN process development efforts to help enable a European supply chain for state of art mmW GaN MMIC technology.
LABEX GANEXT
LABEX GANEXT :
Duration: 2020 – 2025
Coordinator of RF and power electronics: Farid Medjdoub
Objectives:
GANEXT is a French national network including industrials and academics working on nitrides materials and devices.
A funding close to 4 M€ for 4 years has been granted by the ministry of research.
Main part of the activities are focusing on power and RF electronics. Funded projects aim at significantly supporting the roadmap of French industrials in this frame.
DGA/CNRS contract GREAT
DGA/CNRS contract GREAT :
High frequency GaN electronics
Duration: 2021 – 2025
Coordinator : Farid Medjdoub
As a strategic technology, GREAT has ben jointly funded by DGA and CNRS to improve millimeter-wave GaN transistors for future radar systems.
Objectives:
•Develop a robust GaN technology (TRL 4) up to W-band
•Support the optimization of UMS next generation of GaN transistors (GH10)
•Understand the parasitic phenomena and related device degradation under high electric field of ultrashort GaN transistors
•Analytical physical modelling and simulation of devices and circuits
•Ka-band circuit design to validate benefit of the developed technology at the circuit level
Contract EU ECSEL YesVGaN
Contract EU ECSEL YesVGaN :
Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost
Duration: 2021 – 2025
Responsible for IEMN: Farid Medjdoub
Completed Projects
Contract ANR DGA (ASTRID) CROCUS
Contract ANR DGA (ASTRID) CROCUS :
Circuits for robust Communication system in the millimeter wave range based on GaN-on-Si substrate
Duration: 2014 – 2017
Responsible for IEMN: Farid Medjdoub
Objectives:
This project proposes to design, realize in hybrid integration and test some key Ka band circuits such as power amplifier (HPA), Low noise amplifier (LNA) and mixer, using EpiGaN epitaxies. These circuits will be developed with respect to Thales communication (military communication systems) and BLUWAN specifications (Civilian LMDS & Satellite applications).
Contract ANR DGA (ASTRID) COMPACT
Contract ANR DGA (ASTRID) COMPACT :
Understanding and optimization of trapping effects in the frame of the development of next generation of power devices for Ka band applications
Duration: 2018 – 2021
Responsible for IEMN: Farid Medjdoub
Objectives:
This project aims to solve inherent GaN technology issues related to electron trapping effects and thus optimizing key figures of merits such as power-added-efficiency and associated output power for transistors with sub-150 nm gate lengths.
Contract ANR LHOM
Contract ANR LHOM:
AlInN Layers and AlInN Heterostructures for Optimized high electron Mobility transistors
Duration: 2014 – 2017
Responsible for IEMN: Farid Medjdoub
Objectives:
The LHOM research effort establishes a strongly iterative methodology for sustaining the production of the next generation AlInN based high frequency high mobility electron transistors (HEMTs). In this project, three public institutions and a private company are to carry out an extensive investigation extending from the optimization of the growth of the layers and heterostructures to the fabrication and performance validation of the HEMTs for high power millimeter-wave range applications.
Contract ANR BREAkuP
Contract ANR BREAkuP:
Ultra-wide Bandgaps for futuRE high power electronic ApPlications
Duration: 2018 – 2021
Coordinator : Farid Medjdoub
Objectives:
To develop novel robust and reliable AlN-based power devices for high and medium power electronic systems targeting energy conversion efficiency as well as high frequency applications and bringing the Ultra-Wide-Bandgap semiconductors power devices another step towards the wide usability in the energy saving environment and next generation of millimeter-wave devices.
Contract FUI VeGaN
Contract FUI VeGaN:
Very Efficient GaN Amplifiers for Networks
Duration: 2015 – 2019
Responsible for IEMN: Farid Medjdoub
Objectives:
The aim of VeGaN is to contribute to the technology development for high frequency applications and enable the competitiveness of the critical GaN device EU industry, which is key for future telecommunication wireless systems.
Contract EU EDA (European Defense Agency) EUGANIC
Contract EU EDA (European Defense Agency) EUGANIC:
European GaN Integrated Circuits
Duration: 2016 – 2020
Responsible for IEMN: Farid Medjdoub
Objectives:
The main objective of the project is to close the European supply chain for military GaN-based electronics in order to secure the availability of GaN devices for strategic European defense projects. Therefore, European commercial suppliers of SiC substrates and state-of-the-art epitaxially grown wafers (epi-wafer) with HEMT (High Electron Mobility Transistor) layer structures suitable for microwave transistors and circuits shall be developed. With all these activities the project aims to create a leading-edge industrial supply chain for GaN-based electronics for the needs and applications of the European defense industry.
Contract EU H2020 Inrel-NPower
Contract EU H2020 Inrel-NPower:
Innovative Reliable Nitride based Power Devices and Applications
Duration: 2017 – 2020
Responsible for IEMN: Farid Medjdoub
The project has the following main objectives:
Industrial (UMS) bilateral contract ALIEN
Industrial (UMS) bilateral contract ALIEN:
Duration: 2018 – 2020
Responsible for IEMN: Farid Medjdoub
Objectives:
This project covers the evaluation of the AlN/GaN by developing a preindustrial process shared between IEMN and the foundry UMS on 4-inch SiC substrate including the uniformity, device size and reliability issues.
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