Naveed first studied Materials science and engineering in the United States at Penn State University, graduating with a Bachelor of Science in 2018. During his undergraduate studies, he was part of a research lab concentrated on the fabrication of heterojunction semiconductor devices using 2D materials: Graphene and Molybdenum Disulfide(MoS2). In 2019, he went on to complete a Master of Science in Materials Science and Engineering at the University of California, Irvine before accepting a position as a Process Engineer at Intel’s largest site in Phoenix, Arizona. From 2019 to 2024, Naveed worked primarily with finfet Silicon 300mm wafers as a lead engineer in multiple different toolsets across the dry etch department.

Now, as a doctoratal candidate at IEMN, he will be interested in the growth of InSe & GaSe via Molecular Beam Epitaxy (MBE) on a Si Substrate and their characterization via AFM, SEM, Raman, and XRD. His research will go to support new opportunities for the development of optoelectronic devices RF-switch and memory devices.