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GROUPE DE RECHERCHE NANSEE
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NANSEE Group

NANomaterials for Health, l'Energy and the Environment

3 permanent researchers and 3 permanent engineers

Manager: Amar Abderrahmani

Location: IRI Building (1st floor), Campus CNRS Haute-Borne, 50 avenue Halley 59658 VILLENEUVE D'ASCQ


Objectives

Le groupe NANSEE a pour but d’exploiter les propriétés physico-chimiques des nanostructures principalement métalliques et semi-conductrices, et de tirer parti de leur fonctionnalisation contrôlée et de l’analyse de surface pour concevoir des matériaux composites fonctionnels.

Les matériaux conçus sont destinés à des applications dans des domaines allant des biocapteurs et de la nanomédecine (administration ciblée, délivrance contrôlée de médicaments), à la production d’énergie et à l’assainissement  de l’environnement.

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    • Group : CSAM
      • Low-energy devices for healthcare
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      • Multiscale radiofrequency characterization
    • Group : SUBLAMBDA
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    • Group : EPIPHY
      • Team members
        • Clément Barbot
        • Corentin Sthioul
        • Eric Faulques
        • Naveed Stegamat
        • Niels Chapuis
        • Walter BATISTA PESSOA
        • Konstantinos Papatryfonos
        • Konstantinos Papatryfonos
        • Ludovic DESPLANQUE
        • Wijden KHELIFI
        • Jawad HADID
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    • Group : NCM
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    • Group : OPTO
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    • Group : PHOTONIQUE THz
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        • Stefano BARBIERI
        • Fuanki BAVEDILA
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        • Sara BRETIN
        • Yann DESMET
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        • Cybelle GONCALVES
        • Michael HAKL
        • Tomáš HORÁK
        • Jean-François LAMPIN
        • Quyang LIN
        • Sergey MITRYUKOVSKIY
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    • Group : PUISSANCE
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        • Marie LESECQ
        • Nicolas DEFRANCE
        • Jean-Claude DE JAEGER
        • Christophe GAQUIÈRE
      • Research
        • AlGaN/GaN HEMT thermal modeling and characterization
        • Measurement above 110GHz
        • Modelling of GaN-HEMT for high efficiency power converters
        • Nanoribbon-channel AlGaN/GaN HEMTs
        • New technological routes to improve thermal managements in GaN HEMTs
        • Power performance at 40GHz of AlGaN/GaN HEMTs on silicon substrate
        • Temperature monitoring of operating AlGaN/GaN HEMTs
    • Group: WIND
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