Maximilien BILLET

Laboratoire IEMN – UMR 8520
Avenue Henry Poincare
59652 VILLENEUVE D’ASCQ
+33 (0)3 28 65 18 09
maximilien.billet@ed.univ-lille1.fr

– Thesis title. Photoconductors operating at 1.55µm for microwaves and THz waves applications

– Thesis starting date. October 2014

– Thesis topic. This thesis focuses on the realisation of ultrafast photoconductors for microwave and THz applications, in particular for the optoelectronic sampling of RF waves. Two photoconductive materials are investigated: Low Temperature Growth GaAs (LT-GaAs) and InGaAs. To enhance the responsivity of the photoconductor, the active layers are embedded in optical cavities using nanostructured front mirrors. This thesis deals with the optical and electronic design, clean room fabrication and full optoelectronic characterization of the realised devices.

– Publications

[1] Billet, P. Latzel, F. Pavanello, G. Ducournau, J.-F. Lampin and E. Peytavit, “Resonant cavities for efficient LT-GaAs photoconductors operating at λ = 1550 nm”, APL. Photonics, 1 76102 (2016).

[2] Peytavit, M. Billet, Y. Desmet, G. Ducournau, D. Yarekha and J-F. Lampin, “THz photomixers based on nitrogen-ion-implanted GaAs”, J. Appl. Phys., 118, 183102 (2015).

– Conference proceedings

[3] Billet, P. Latzel, F. Pavanello, G. Ducournau, J.-F. Lampin and E. Peytavit, “Resonant cavities using nanostructured front mirror for efficient LT-GaAs photoconductor operating at λ=1.55 μm” 41st International Conference on Infrared Millimeter and Terahertz Waves IRMMW-THz 2016