Graphene (and other 2D materials) Devices for high-speed and flexible electronics applications
The Institute of Electronics Micro-electronics and Nanotechnology (IEMN – www.iemn.univ-lille1.fr ) is currently offering one experimental two years post-doctoral position (12 month, from 1st of November 2015 renewable for 12 more months) in the field of graphene electronics devices.
The project will focus on the study of high speed graphene field effect transistors devices, based on CVD and SiC graphene. The successful candidate will join the CARBON team (www.carbon.iemn.univ-lille1.fr ) led by Prof. Henri Happy, and will work on fabrication and high-frequency characterization of graphene devices. The first goals will be optimizing fmax for real life applications and an aggressive scaling of the device size to approach the ballistic regime.
The IEMN facilities include a state of the art clean room of 1500 m2, fully equipped for graphene device fabrication (including two 100kV e-beam systems, CVD graphene oven, metal deposition and dry etching, …). The high-frequency measurements will be carried out in the characterization facility of the IEMN, which allows probing the devices from DC up to 220 GHz. The postdoctoral researcher will also interact strongly with the EPIPHY graphene team which carries out growth of CVD on metal, and epitaxial graphene on silicon carbide.
The position is funded within the EU-project GRAPHENE FLAGSHIP, where the CARBON team is part of the ‘high speed electronic’ and the ‘flexible electronics’ workpackages. This will ensure for the successful candidate a stimulating environment and strong collaborations within top-class European and French laboratories.
The applicants should be highly motivated and have a strong background in clean room nanofabrication of graphene devices (experience with e-beam lithography is mandatory), and standard characterization tools (AFM, Raman, low-frequency electrical measurements). Experience with high-frequency measurements is highly welcome, but not essential.
Contact : Prof. Henri Happy firstname.lastname@example.org