My research background is in organic electronics, physics, computer modeling, and self-assembly processes, with the focus of utilizing those to create new functional materials as the building blocks of novel soft-electronic devices. I have developed during my PhD Nanoparticles organic memory field effect transistors (NOMFETs) at the Institute of electronic, microelectronics and nanotechnology (IEMN) with the guidance of Prof. Kamal Lmimouni and Prof. Adel Kalboussi, combining skills and knowledge in both nanotechnology (Electrical Eng.) and Materials Eng. To expand these concepts, I focused on developing new kinds of memory devices based on double floating gate made of gold nanoparticles and reduced graphene oxide. My main interest is to boost the memory performance (endurance, memory window and retention time). I was a research and teaching assistant in different engineering schools and universities such as « Ecole Centrale Lille », « IMT Lille-Douai » and « University of Lille ».
In 2016, I integrated AIMAN-Films Group where I have worked on modelling and fabrication of Phononic Crystal Surface Acoustic Waves Sensors. I have also experienced the Job of a Dream consultant in private company « Techshop Les Ateliers Leroy Merlin » where I supervised many projects in the field of IOT’s, Robotics …
Actually, I work as associate professor in ICAM Institute a school engineering in Lille and I am a member of NCM groupe since 2021.
DISTINCTIONS:
2nd prize « The best international Phd thesis in sciences and technologies », 2018 Région Hauts-de-France:
http://www.cue-lillenorddefrance.fr/?q=college-doctoral/prixdethese
SCIENTIFIC PRODUCTION:
5 selected publications
1. B.Hafsi, A.Boubaker, D.Guerin, S.Lenfant, S.Desbief, F.Alibart, D.Vuillaume, A.Kalboussi, K.Lmimouni
N-type Polymeric Gold Nanoparticles Memory Device, Artificial Synapse-Transistor
Organic Electronics, Volume 50, 2017, 499-506
https://doi.org/10.1016/j.orgel.2017.08.029
2. B.Hafsi, A.Boubaker, D.Guerin, S.Lenfant, K. Lmimouni, A.Kalboussi
N-Type Polymeric Organic Flash Memory Device: Effect of Reduced Graphene Oxide Floating Gate
Organic Electronics, Volume 45, 2017, 81-88
https://doi.org/10.1016/j.orgel.2017.02.035
3. B.Hafsi, A.Boubaker, D.Guerin, S.Lenfant, A.Kalboussi, K. Lmimouni
Traps and interface fixed charge effects on a solution-processed N type polymeric-based organic field effect transistor
Journal of electronic materials, 46, 2017, 1128–1136
https://doi.org/10.1007/s11664-016-5067-3
4. B. Hafsi, A. Boubaker, N. Ismaïl, A. Kalboussi, and K. Lmimouni
TCAD Simulations of graphene field-effect transistors based on the quantum capacitance effect
J. Korean Phys. Soc., vol. 67, no. 7, pp. 1201–1207, Oct. 2015
https://doi.org/10.3938/jkps.67.1201
5. B.Hafsi, Aïmen Boubaker ; Adel Kalboussi, David Guerin; Stéphane Lenfant; Fabien Alibart; Kamal Lmimouni
Anti-Hebbian Spike-Timing Dependent Plasticity in N-Type Nanoparticle Organic Memory Field Effect Transistor
6th NANO Boston Conference, December 7-9, 2020 | Boston, MA, USA. (Virtual)