Facilities
High voltage on-wafer power test bench up to 10 kV
- On-wafer IV and CV room temperature measurements up to 10 kV under Fluorinert liquid and high current up to 20A
- Enable quick assessment (NO packaging needed) directly on-wafer of lateraland vertical breakdown voltage as well as buffer trapping (substrate ramps)
Partially funded by the H2020 EU NMBP project InRelNPowerand the French national network LABEX GANEXT
Shared foundry processing of RF device
1)
2)
1) Common mask set for fabrication of discrete devices and pre-matched MMICs on4-inch substrat
2) Front-side active devices performed at IEMN while passives and back-end processing at the foundry for innovative technology assessment on industry representative devices
High power on-wafer power test bench at 40 GHz and 94 GHz
Active on-wafer Loadpull high power test bench at 40 GHz and 94 GHz
Both CW and pulsed mode (1μs pulsed width) available
Flexible impedance matching and high input power for optimum performance assessment
Partially funded by the EDA EU project EUGANIC and the French national network LABEX GANEXT
Wide bandgap device TCAD simulation
TCAD simulation provides many benefits such as reducing the time and manufacturing cycles spent to develop semiconductor technologies or increasing the understanding of mechanisms involved in innovative devices using emerging materials and heterostructures by visualizing internal physical processes.
We developed a methodology to simulate complex devices based on TCAD SILVACO simulation and modelling coupled with ADS software in order to reproduce and predict device behavior both in small and large signal regimes.
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