PUBLICATIONS

2018

Articles

Conferences

2017

Articles

Conferences

2016

Articles

  1. A 2.4 GHz interferer-resilient wake-up receiver using a dual-IF multi-stage N-path architecture
    SALAZAR Camilo, CATHELIN Andreia, KAISER Andreas, RABAEY Jan, , , , , , , , , , ,
    IEEE J. Solid-State Circuits, 51, 9 (2016) 2091-2105
    doi: 10.1109/JSSC.2016.2582509
  2. A configurable transmitter architecture for IEEE 802.11ac and 802.11ad standards
    GEBREYOHANNES F., FRAPPE A., KAISER A., , , , , , , , , , , ,
    IEEE Trans. Circuits Syst. II-Express Briefs, 63, 1 (2016) 9-13
    doi: 10.1109/TCSII.2015.2468920
  3. Detecting unintended Schottky junctions and their impact on tunnel FET characteristics
    HUTIN Louis, LE ROYER Cyrille, OEFLEIN Robert Pierce, MARTINIE Sébastien, BORREL Julien, DELAYE Vincent, HARTMANN Jean-Michel, TABONE Claude, VINET Maud, , , , , ,
    IEEE Trans. Electron Devices, 63, 6 (2016) 2577-2582
    doi: 10.1109/TED.2016.2556580
  4. Fabrication of thin-film silicon membranes with phononic crystals for thermal conductivity measurements
    HARAS Maciej, LACATENA Valeria, BAH Thierno Moussa, DIDENKO Stanislav, ROBILLARD Jean-François, MONFRAY Stéphane, SKOTNICKI Thomas, DUBOIS Emmanuel, , , , , , ,
    IEEE Electron Device Lett., 37, 10 (2016) 1358-1361
    doi: 10.1109/LED.2016.2600590
  5. Modeling of Fermi-level pinning alleviation with MIS contacts : n and pMOSFETs cointegration considerations – Part I
    BORREL Julien, HUTIN Louis, ROZEAU Olivier, JAUD Marie-Anne, MARTINIE Sébastien, GREGOIRE Magali, DUBOIS Emmanuel, VINET Maud, , , , , , ,
    IEEE Trans. Electron Devices, 63, 9 (2016) 3413-3418
    doi: 10.1109/TED.2016.2590836
  6. Modeling of Fermi-level pinning alleviation with MIS contacts : n and pMOSFETs cointegration considerations – Part II
    BORREL Julien, HUTIN Louis, ROZEAU Olivier, JAUD Marie-Anne, MARTINIE Sébastien, GREGOIRE Magali, DUBOIS Emmanuel, VINET Maud, , , , , , ,
    IEEE Trans. Electron Devices, 63, 9 (2016) 3419-3423
    doi: 10.1109/TED.2016.2590826
  7. Oxidation-assisted graphene heteroepitaxy on copper foil
    RECKINGER Nicolas, TANG Xiaohui, JOUCKEN Frédéric, LAJAUNIE Luc, ARENAL Raul, DUBOIS Emmanuel, HACKENS Benoît, HENRARD Luc, COLOMER Jean-François, , , , , ,
    Nanoscale, 8, 44 (2016) 18751-18759
    doi: 10.1039/C6NR02936A
  8. Physical study by surface characterizations of sarin sensor on the basis of chemically functionalized silicon nanoribbon field effect transistor
    SMAALI Kacem, GUERIN David, PASSI Vikram, ORDRONNEAU Lucie, CARELLA Alexandre, MELIN Thierry, DUBOIS Emmanuel, VUILLAUME Dominique, SIMONATO Jean-Pierre, LENFANT Stéphane, , , , ,
    J. Phys. Chem. C, 120, 20 (2016) 11180-11191
    doi: 10.1021/acs.jpcc.6b00336
  9. Synthesis and characterization of low work function alkali oxide thin films for unconventional thermionic energy converters
    GIORGIS Valentina, MORINI François, ZHU Tianqi, ROBILLARD Jean-François, WALLART Xavier, CODRON Jean-Louis, DUBOIS Emmanuel, , , , , , , ,
    J. Appl. Phys., 120, 20 (2016) 205108, 6 pages
    doi: 10.1063/1.4968532

Conferences

  1. [Invited] Metal/insulator/semiconductor contacts for ultimately scaled CMOS nodes : projected benefits and remaining challenges
    BORREL Julien, HUTIN Louis, GRAMPEIX Helen, NOLOT Emmanuel, TESSAIRE Magali, RODRIGUEZ Guillaume, MORAND Yves, NEMOUCHI Fabrice, GREGOIRE Magali, DUBOIS Emmanuel, VINET Maud, , , ,
    16th International Workshop on Junction Technology, IWJT 2016, Shanghai, China, may 9-10
    (2016) 14-18, ISBN 978-1-4673-9963-0 ; e-ISBN 978-1-4673-9965-4
    doi: 10.1109/IWJT.2016.7486664
  2. A digital delay line with coarse/fine tuning through gate/body biasing in 28nm FDSOI
    SOURIKOPOULOS Ilias, FRAPPE Antoine, CATHELIN Andreia, CLAVIER Laurent, KAISER Andreas, , , , , , , , , ,
    42nd European Solid-State Circuits Conference, ESSCIRC 2016, Lauzanne, Switzerland, september 12-15
    (2016) 145-148, ISBN 978-1-5090-2973-0 ; e-ISBN 978-1-5090-2972-3
    doi: 10.1109/ESSCIRC.2016.7598263
  3. Considerations on Fermi-depinning, dipoles and oxide tunneling for oxygen-based dielectric insertions in advanced CMOS contacts
    BORREL J., HUTIN L., GRAMPEIX H., NOLOT E., GHEGIN E., RODRIGUEZ P., TABONE C., ALLAIN F., BARNES J.P., MORAND Y., NEMOUCHI F., GREGOIRE M., DUBOIS E., VINET M.,
    IEEE Silicon Nanoelectronics Workshop, SNW 2016, Honolulu, HI, USA, juin 12-13
    (2016) 140-141, ISBN 978-1-5090-0727-1 ; e-ISBN 978-1-5090-0726-4
    doi: 10.1109/SNW.2016.7578022
  4. Improved performance of flexible CMOS technology using ultimate thinning and transfer bonding
    DUBOIS Emmanuel, PHILIPPE Justine, BERTHOME Matthieu, ROBILLARD Jean-François, GAQUIERE Christophe, DANNEVILLE François, GLORIA Daniel, RAYNAUD C., , , , , , ,
    6th Electronics System-integration Technology Conference, ESTC 2016, Grenoble, France, september 13-16
    (2016) 5 pages, ISBN 978-1-5090-1403-3 ; e-ISBN 978-1-5090-1402-6
    doi: 10.1109/ESTC.2016.7764513
  5. Multi-standard semi-digital FIR DAC : a design procedure
    GEBREYOHANNES Fikre Tsigabu, FRAPPE Antoine, KAISER Andreas, , , , , , , , , , , ,
    4th IEEE MTT-S International Wireless Symposium, IWS 2016, Shanghai, China, march 14-16
    (2016) 4 pages, ISBN 978-1-5090-0697-7 ; e-ISBN 978-1-5090-0696-0
    doi: 10.1109/IEEE-IWS.2016.7585474
  6. Sampling modulation : an energy efficient novel feature extraction for biosignal processing
    CAUSO Matteo, BENATTI Simone, FRAPPE Antoine, CATHELIN Andreia, FARELLA E., KAISER Andreas, BENINI L., RABAEY J.M., , , , , , ,
    12th IEEE Biomedical Circuits and Systems Conference, BioCAS 2016, Shanghai, China, october 17-19
    (2016) 348-351, ISBN 978-1-5090-2960-0 ; e-ISBN 978-1-5090-2959-4
    doi: 10.1109/BioCAS.2016.7833803
2015

Articles

  1. Self-equilibration of the diameter of Ga-catalyzed GaAs nanowires
    DUBROVSKII V.G., XU T., DIAZ ALVAREZ A., LARRIEU G., PLISSARD S.R., CAROFF P., GLAS F., GRANDIDIER B., , , , , , ,
    Nano Lett., 15, 8 (2015) 5580-5584
    doi: 10.1021/acs.nanolett.5b02226
  2. Thermoelectric energy conversion : how good can silicon be ?
    HARAS M., LACATENA V., MORINI F., ROBILLARD J.F., MONFRAY S., SKOTNICKI T., DUBOIS E., , , , , , , ,
    Mater. Lett., 157 (2015) 193-196
    doi: 10.1016/j.matlet.2015.05.012
  3. Toward quantitative modeling of silicon phononic thermocrystals
    LACATENA V., HARAS M., ROBILLARD J.F., MONFRAY S., SKOTNICKI T., DUBOIS E., , , , , , , , ,
    Appl. Phys. Lett., 106, 11 (2015) 114104, 4 pages
    doi: 10.1063/1.4915619

Conferences

  1. A 97dBm-sensitivity interferer-resilient 2.4GHz wake-up receiver using dual-IF multi-N-path architecture in 65nm CMOS
    SALAZAR C., KAISER A., CATHELIN A., RABAEY J.
    IEEE International Solid-State Circuits Conference, ISSCC 2015, San Francisco, CA, USA, february 22-26
    (2015) paper 13.5, 242-244, ISBN 978-1-4799-6223-5 ; e-ISBN 978-1-4799-6224-2
    doi: 10.1109/ISSCC.2015.7063016
  2. Application-oriented performance of RF CMOS technologies on flexible substrates
    PHILIPPE J., LECAVELIER A., BERTHOME M., ROBILLARD J.F., GAQUIERE C., DANNEVILLE F., GLORIA D., RAYNAUD C., DUBOIS E., , , , , ,
    IEEE International Electron Devices Meeting, IEDM 2015, Washington, DC, USA, december 7-9
    (2015) 15.7.1-15.7.4, ISBN 978-1-4673-9893-0 ; e-ISBN 978-1-4673-9894-7
    doi: 10.1109/IEDM.2015.7409707
  3. Characterization of flexible CMOS technology tranferred onto a metallic foil
    PHILIPPE J., LECAVELIER DES ETANGS-LEVALLOIS A., LATZEL P., DANNEVILLE F., ROBILLARD J.F., GLORIA D., DUBOIS E., , , , , , , ,
    Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, Bologna, Italy, january 26-28
    (2015) 197-200, e-ISBN 978-1-4799-6911-1
    doi: 10.1109/ULIS.2015.7063747
  4. Considerations for high-speed configurable-bandwidth time-interleaved digital delta-sigma modulators and synthesis in 28 nm UTBB FDSOI
    MARIN R.C., FRAPPÉ A., KAISER A., CATHELIN A.
    13th IEEE International Conference on New Circuits and Systems, NEWCAS 2015, Grenoble, France, june 7-10
    (2015) paper 19A4, 4 pages, e-ISBN 978-1-4799-8893-8
    doi: 10.1109/NEWCAS.2015.7182049
  5. Reduced thermal conductivity of periodically nanostructured silicon : a quantitative molecular dynamics study
    LACATENA V., HARAS M., ROBILLARD J.F., MONFRAY S., SKOTNICKI T., DUBOIS E.
    3rd International Conference on Phononic Crystals/Metamaterials, Phonon Transport and Phonon Coupling, PHONONICS 2015, Paris, France, may 31-june 5
    (2015) PHONONICS-2015-0388, 50-51
    https://dl.dropboxusercontent.com/u/57085788/Program_Phononics_2015_Complete.pdf
  6. Semi-digital FIR DAC for low power single carrier IEEE 802.11ad 60GHz transmitter
    GEBREYOHANNES F.T., FRAPPE A., KAISER A.
    13th IEEE International Conference on New Circuits and Systems, NEWCAS 2015, Grenoble, France, june 7-10
    (2015) paper 14A5, 4 pages, e-ISBN 978-1-4799-8893-8
    doi: 10.1109/NEWCAS.2015.7182016
  7. Ultra-foldable/stretchable wideband RF interconnects using laser ablation of metal film on a flexible substrate
    BOUAZIZ S., BERTHOME M., ROBILLARD J.F., DUBOIS E.
    45th European Microwave Conference, EuMC 2015, Paris, France, september 7-10
    (2015) 869-872, e-ISBN 978-2-87487-039-2
    doi: 10.1109/EuMC.2015.7345902
  8. Vertical field effect transistor with sub-15nm gate-all-around on Si nanowire array
    LARRIEU G., GUERFI Y., HAN X.L., CLÉMENT N., , , , , , , , , , ,
    45th European Solid-State Device Conference, ESSDERC 2015, Graz, Austria, september 14-18
    (2015) 202-205, ISBN 978-1-4673-7133-9 ; e-ISBN 978-1-4673-7135-3
    doi: 10.1109/ESSDERC.2015.7324750
  9. Wireless drive of a MEMS ciliary motion actuator via coupled magnetic resonances using micro inductors
    SAKAMOTO N., FRAPPE A., STEFANELLI B., KAISER A., MITA Y.
    18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015, Anchorage, AK, USA, june 21-25
    (2015) 1961-1964, e-ISBN 978-1-4799-8955-3
    doi: 10.1109/TRANSDUCERS.2015.7181337
  10. Investigation of ambipolar signature in SiGeOI homojunction tunnel FETs
    HUTIN L., OEFLEIN R.P., BORREL J., MARTINIE S., TABONE C., LE ROYER C., VINET M., , , , , , , ,
    Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, Bologna, Italy, january 26-28
    Solid-State Electron., 115, Part B (2016) 160-166
    doi: 10.1016/j.sse.2015.08.007
2014

Articles

  1. Low work function thin film growth for high efficiency thermionic energy converter: coupled Kelvin probe and photoemission study of potassium oxide
    MORINI F., DUBOIS E., ROBILLARD J.F., MONFRAY S., SKOTNICKI T., , , , , , , , , ,
    Phys. Status Solidi A-Appl. Mat. Sci., 211, 6 (2014) 1334-1337
    doi: 10.1002/pssa.201300136
  2. Phononic engineering of silicon using “dots on the fly” e-beam lithography and plasma etching
    LACATENA V., HARAS M., ROBILLARD J.F., MONFRAY S., SKOTNICKI T., DUBOIS E., , , , , , , , ,
    Microelectron. Eng., 121 (2014) 131-134
    doi: 10.1016/j.mee.2014.04.034
  3. Unconventional thin-film thermoelectric converters: structure, simulation, and comparative study
    HARAS M., LACATENA V., MONFRAY S., ROBILLARD J.F., SKOTNICKI T., DUBOIS E., , , , , , , , ,
    J. Electron. Mater., 43, 6 (2014) 2109-2114
    doi: 10.1007/s11664-014-2982-z

Conferences

  1. A decision feedback equalizer with channel-dependent power consumption for 60-GHz receiver
    SOURIKOPOULOS I., FRAPPE A., KAISER A., CLAVIER L.
    IEEE International Symposium on Circuits and Systems, ISCAS 2014, Melbourne, Australia, june 1-5
    (2014) 1484-1487, ISBN 978-1-4799-3431-7
    doi: 10.1109/ISCAS.2014.6865427
  2. An adaptive synchronization scheme for 60 GHz subsampling receivers
    MARIN R.C., FRAPPE A.
    International Symposium on Fundamentals of Electrical Engineering, ISFEE 2014, Bucharest, Romania, november 28-29
    (2014) paper 223, 4 pages, ISBN 978-1-4799-6820-6 ; e-ISBN 978-1-4799-6821-3
    doi: 10.1109/ISFEE.2014.7050564
  3. Estimation of 60-GHz channels based on energy detection
    MEBALEY-EKOME S., CLAVIER L., FRAPPE A., SIMON E., SOURIKOPOULOS I.
    IEEE International Conference on Ultra-Wideband, ICUWB 2014, Paris, France, september 1-3
    (2014) 68-73, e-ISBN 978-1-4799-5396-7
    doi: 10.1109/ICUWB.2014.6958953
  4. Fabrication of integrated micrometer platform for thermoelectric measurements
    HARAS M., LACATENA V., MORINI F., ROBILLARD J.F., MONFRAY S., SKOTNICKI T., DUBOIS E.
    60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, CA, USA, december 15-17
    (2014) 8.5.1-8.5.4, ISBN 978-1-4799-8000-0, e-ISBn 978-1-4799-8001-7
    doi: 10.1109/IEDM.2014.7047012
  5. Subsampling techniques applied to 60 GHz wireless receivers in 28 nm CMOS
    GRAVE B., FRAPPÉ A., KAISER A.
    12th IEEE International New Circuits and Systems Conference, NEWCAS 2014, Trois-Rivières, Canada, june 22-25
    (2014) paper 4029, 365-368, e-ISBN 978-1-4799-4885-7
    doi: 10.1109/NEWCAS.2014.6934058
2013

Articles

  1. A converging route towards very high frequency, mechanically flexible, and performance stable integrated electronics
    LECAVELIER DES ETANGS-LEVALLOIS A., CHEN Z.K., LESECQ M., LEPILLIET S., TAGRO Y., DANNEVILLE F., ROBILLARD J.F., HOEL V., TROADEC D., GLORIA D., RAYNAUD C., RATAJCZAK J., DUBOIS E., ,
    J. Appl. Phys., 113, 15 (2013) 153701, 9 pages
    doi: 10.1063/1.4801803
  2. A reconfigurable IF to DC sub-sampling receiver architecture with embedded channel filtering for 60 GHz applications
    GRAVE B., FRAPPE A., KAISER A., , , , , , , , , , , ,
    IEEE Trans. Circuits Syst. I-Regul. Pap., 60, 5 (2013) 1220-1231
    doi: 10.1109/TCSI.2013.2248791
  3. Design guidelines for releasing silicon nanowire arrays by liquid and vapor phase hydrofluoric acid
    PASSI V., DUBOIS E., LECESTRE A., SANCHEZ-LINDE A., DU BOIS B., RASKIN J.P., , , , , , , , ,
    Microelectron. Eng., 103 (2013) 57-65
    doi: 10.1016/j.mee.2012.09.002
  4. Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays
    CLEMENT N., HAN X.L., LARRIEU G., , , , , , , , , , , ,
    Appl. Phys. Lett., 103, 26 (2013) 263504, 5 pages
    doi: 10.1063/1.4858955
  5. Fabrication, characterization, and physical analysis of AlGaN/GaN HEMTs on flexible substrates
    DEFRANCE N., LECOURT F., DOUVRY Y., LESECQ M., HOEL V., LECAVELIER DES ETANGS-LEVALLOIS A., CORDIER Y., EBONGUE A., DE JAEGER J.C., , , , , ,
    IEEE Trans. Electron Devices, 60, 3 (2013) 1054-1059
    doi: 10.1109/TED.2013.2238943
  6. Hierarchical sizing and biasing of analog firm intellectual properties
    ISKANDER R., LOUËRAT M.M., KAISER A., , , , , , , , , , , ,
    Integration-VLSI J., 46, 2 (2013) 172-188
    doi: 10.1016/j.vlsi.2012.01.001
  7. Modelling and engineering of stress based controlled oxidation effects for silicon nanostructure patterning
    HAN X.L., LARRIEU G., KRZEMINSKI C., , , , , , , , , , , ,
    Nanotechnology, 24, 49 (2013) 495301, 14 pages
    doi: 10.1088/0957-4484/24/49/495301
  8. Piezoresistance of nano-scale silicon up to 2 GPa in tension
    BHASKAR U.K., PARDOEN T., PASSI V., RASKIN J.P., , , , , , , , , , ,
    Appl. Phys. Lett., 102, 3 (2013) 031911, 4 pages
    doi: 10.1063/1.4788919
  9. Surface states and conductivity of silicon nano-wires
    BHASKAR U.K., PARDOEN T., PASSI V., RASKIN J.P., , , , , , , , , , ,
    J. Appl. Phys., 113, 13 (2013) 134502, 8 pages
    doi: 10.1063/1.4798611
  10. Vertical nanowire array-based field effect transistors for ultimate scaling
    LARRIEU G., HAN X.L., , , , , , , , , , , , ,
    Nanoscale, 5, 6 (2013) 2437-2441
    doi: 10.1039/C3NR33738C

Conferences

  1. A multi-path multi-rate CMOS polar DPA for wideband multi-standard RF transmitters
    WERQUIN A., FRAPPE A., KAISER A.
    IEEE Radio Frequency Integrated Circuits Symposium, IEEE RFIC 2013, Seattle, WA, USA, june 2-4
    (2013) paper RTU2A-4, 327-330, ISBN 978-1-4673-6059-3
    doi: 10.1109/RFIC.2013.6569595
  2. Over-the-air validation of PA nonlinearity estimation at the receiver
    RUDANT L., D’ERRICO R., ROBIN M., ZELENY J., ROSSON P., DEHOS C., KAISER A.
    7th European Conference on Antennas and Propagation, EuCAP 2013, Gothenburg, Sweden, april 8-12
    (2013) 308-311, ISBN 978-1-4673-2187-7, e-ISBN 978-88-907018-1-8
    http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6546269
  3. Self-aligned contacts for 10nm FDSOI node : from device to circuit evaluation
    NIEBOJEWSKI H., LE ROYER C., MORAND Y., ROZEAU O., JAUD M.A., BARNOLA S., ARVET C., PRADELLES J., BUSTOS J., PEDINI J.M., DUBOIS E., FAYNOT O.
    39th IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, IEEE S3S 2013, Monterey, CA, USA, october 7-10
    (2013) paper 6a.4, 2 pages, ISBN 978-1-4799-1361-9
    doi: 10.1109/S3S.2013.6716549
  4. Extra-low parasitic gate-to-contacts capacitance architecture for sub-14 nm transistor nodes
    NIEBOJEWSKI H., LE ROYER C., MORAND Y., ROZEAU O., JAUD M.A., DUBOIS E., POIROUX T., BENSAHEL D., , , , , , ,
    9th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2013, Paris, France, januray 21-23
    Solid-State Electron., 97 (2014) 45-51
    doi: 10.1016/j.sse.2014.04.028
2012

Articles

  1. A 1 k-pixel video camera for 0.7-1.1 terahertz imaging applications in 65-nm CMOS
    AL HADI Richard, SHERRY Hani, GRZYB Janusz, ZHAO Yan, FORSTER Wolfgang, KELLER Hans M., CATHELIN Andreia, KAISER Andreas, PFEIFFER Ullrich R., , , , , ,
    IEEE J. Solid-State Circuits, 47, 12 (2012) 2999-3012
    doi: 10.1109/JSSC.2012.2217851
  2. A 10 Gb/s 45 mW adaptive 60 GHz baseband in 65 nm CMOS
    THAKKAR C., KONG L., JUNG K., FRAPPE A., ALON E., , , , , , , , , ,
    IEEE J. Solid-State Circuits, 47, 4 (2012) 952-968
    doi: 10.1109/JSSC.2012.2184651
  3. A 7-bit 18th order 9.6 GS/s FIR up-sampling filter for high data rate 60-GHz wireless transmitters
    MULLER J., STEFANELLI B., FRAPPE A., YE L., CATHELIN A., NIKNEJAD A., KAISER A., , , , , , , ,
    IEEE J. Solid-State Circuits, 47, 7 (2012) 1743-1756
    doi: 10.1109/JSSC.2012.2191677
  4. Anisotropic vapor HF etching of silicon dioxide for Si microstructure release
    PASSI V., SODERVALL U., NILSSON B., PETERSSON G., HAGBERG M., KRZEMINSKI C., DUBOIS E., DU BOIS B., RASKIN J.P., , , , , ,
    Microelectron. Eng., 95 (2012) 83-89
    doi: 10.1016/j.mee.2012.01.005
  5. Band gap tunability of magneto-elastic phononic crystal
    BOU MATAR O., ROBILLARD J.F., VASSEUR J.O., HLADKY-HENNION A.C., DEYMIER P.A., PERNOD P., PREOBRAZHENSKY V., , , , , , , ,
    J. Appl. Phys., 111, 5 (2012) 054901-1-14
    doi: 10.1063/1.3687928
  6. Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts
    HAN X.L., LARRIEU G., DUBOIS E., CRISTIANO F., , , , , , , , , , ,
    Surf. Sci., 606, 9-10 (2012) 836-839
    doi: 10.1016/j.susc.2012.01.021
  7. Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer
    RECKINGER N., DUTU C.A., TANG X., DUBOIS E., YAREKHA D.A., GODEY S., NOUGARET L., LASZCZ A., RATAJCZAK J., RASKIN J.P., , , , ,
    Thin Solid Films, 520, 13 (2012) 4501-4505
    doi: 10.1016/j.tsf.2012.02.076
  8. Low-frequency noise in Schottky-barrier-based nanoscale field-effect transistors
    CLEMENT N., LARRIEU G., DUBOIS E., , , , , , , , , , , ,
    IEEE Trans. Electron Devices, 59, 1 (2012) 180-187
    doi: 10.1109/TED.2011.2169676
  9. Receiver-aided predistortion of power amplifier non-linearities in cellular networks
    ZELENY J., DEHOS C., ROSSON P., KAISER A., , , , , , , , , , ,
    IET Sci. Meas. Technol., 6, 3 (2012) 168-175
    doi: 10.1049/iet-smt.2011.0016
  10. Understanding of the retarded oxidation effects in silicon nanostructures
    KRZEMINSKI C., HAN X.L., LARRIEU G., , , , , , , , , , , ,
    Appl. Phys. Lett., 100, 26 (2012) 263111-1-4
    doi: 10.1063/1.4729410

Conferences

  1. A 1kPixel CMOS camera chip for 25fps real-time terahertz imaging applications
    SHERRY H., GRZYB J., ZHAO Y., AL HADI R., CATHELIN A., KAISER A., PFEIFFER U.
    IEEE International Solid-State Circuits Conference, ISSCC 2012, San Francisco, CA, USA, february 19-23
    (2012) 252-254, ISBN 978-1-4673-0376-7
    doi: 10.1109/ISSCC.2012.6176997
  2. A 65nm CMOS 1-to-10GHz tunable continuous-time low-pass filter for high-data-rate communications
    FAWZI H., EGOT M., KAISER A., CATHELIN A., NAUTA B.
    IEEE International Solid-State Circuits Conference, ISSCC 2012, San Francisco, CA, USA, february 19-23
    (2012) 362-364, ISBN 978-1-4673-0376-7
    doi: 10.1109/ISSCC.2012.6177052
  3. A reconfigurable 60GHz subsampling receiver architecture with embedded channel filtering
    GRAVE B., FRAPPE A., KAISER A.
    IEEE International Symposium on Circuits and Systems, ISCAS 2012, Seoul, Korea, may 20-23
    (2012) 1295-1298, ISBN 978-1-4673-0218-0
    doi: 10.1109/ISCAS.2012.6271476
  4. Electrical nerve agents sensors based on chemically functionalized nanomaterials
    CARELLA A., CLAVAGUERA S., CELLE C., LENFANT S., VUILLAUME D., DUBOIS E., PASSI V., GORINTIN L., BONDAVALLI P., SIMONATO J.P.
    NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, Santa Clara, CA, USA, june 18-21
    (2012) 130-132, ISBN 978-1-4665-6275-2
    http://www.nsti.org/procs/Nanotech2012v2/3/T8.212
  5. High frequency noise potentialities of reported CMOS 65 nm SOI technology on flexible substrate
    TAGRO Y., LECAVELIER DES ETANGS-LEVALLOIS A., POULAIN L., LEPILLIET S., GLORIA D., RAYNAUD C., DUBOIS E., DANNEVILLE F., , , , , , ,
    12th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems, SiRF 2012, Santa Clara, CA, USA, january 16-18
    (2012) 89-92, ISBN 978-1-4577-1317-0
    doi: 10.1109/SiRF.2012.6160147
  6. Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics
    LECAVELIER DES ETANGS-LEVALLOIS A., LESECQ M., DANNEVILLE F., TAGRO Y., LEPILLIET S., HOEL V., TROADEC D., GLORIA D., RAYNAUD C., DUBOIS E., , , , ,
    8th European Workshop on Silicon on Insulator Technology, Devices and Circuits, EuroSOI 2012, Montpellier, France, january 23-25
    Solid-State Electron., 90 (2013) 73-78
    doi: 10.1016/j.sse.2013.02.049
2011

Articles

  1. 150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate
    LECAVELIER DES ETANGS-LEVALLOIS A., DUBOIS E., LESECQ M., DANNEVILLE F., POULAIN L., TAGRO Y., LEPILLIET S., GLORIA D., RAYNAUD C., TROADEC D., , , , ,
    IEEE Electron Device Lett., 32, 11 (2011) 1510-1512
    doi: 10.1109/LED.2011.2166241
  2. A complete UMTS transmitter using BAW filters and duplexer : a 90-nm CMOS digital RF signal generator and a 0.25-μm BiCMOS power amplifier
    FLAMENT A., FRAPPE A., STEFANELLI B., KAISER A., CATHELIN A., GIRAUD S., CHATRAS M., BILA S., CROS D., DAVID J.B., LEYSSENNE L., KERHERVE E., , ,
    Int. J. RF Microw. Comput-Aid. Eng., 21, 5 (2011) 466-476
    doi: 10.1002/mmce.20551
  3. CMOS inverter based on Schottky source-drain MOS technology with low-temperature dopant segregation
    LARRIEU G., DUBOIS E., , , , , , , , , , , , ,
    IEEE Electron Device Lett., 32, 6 (2011) 728-730
    doi: 10.1109/LED.2011.2131111
  4. Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories
    TANG X.H., KRZEMINSKI C., LECAVELIER DES ETANGS-LEVALLOIS A., CHEN Z.K., DUBOIS E., KASPER E., KARMOUS A., RECKINGER N., FLANDRE D., FRANCIS L.A., COLINGE J.P., RASKIN J.P., , ,
    Nano Lett., 11, 11 (2011) 4520-4526
    doi: 10.1021/nl202434k
  5. Erbium silicide growth in the presence of residual oxygen
    RECKINGER N., TANG X., GODEY S., DUBOIS E., LASZCZ A., RATAJCZAK J., VLAD A., DUTU C.A., RASKIN J.P.
    J. Electrochem. Soc., 158, 7 (2011) H715-H723
    doi: 10.1149/1.3585777
  6. High gain and fast detection of warfare agents using back-gated silicon-nanowired MOSFETs
    PASSI V., RAVAUX F., DUBOIS E., CLAVAGUERA S., CARELLA A., CELLE C., SIMONATO J.P., SILVESTRI L., REGGIANI S., VUILLAUME D., RASKIN J.P., , , ,
    IEEE Electron Device Lett., 32, 7 (2011) 976-978
    doi: 10.1109/LED.2011.2146750
  7. High performance of AlGaN/GaN HEMTs reported on adhesive flexible tape
    LESECQ M., HOEL V., LECAVELIER DES ETANGS-LEVALLOIS A., PICHONAT E., DOUVRY Y., DE JAEGER J.C., , , , , , , , ,
    IEEE Electron Device Lett., 32, 2 (2011) 143-145
    doi: 10.1109/LED.2010.2091251
  8. High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning
    PLISSARD S., LARRIEU G., WALLART X., CAROFF P., , , , , , , , , , ,
    Nanotechnology, 22, 27 (2011) 275602-1-7
    doi: 10.1088/0957-4484/22/27/275602
  9. Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width
    RECKINGER N., TANG X., DUBOIS E., LARRIEU G., FLANDRE D., RASKIN J.P., AFZALIAN A., , , , , , , ,
    Appl. Phys. Lett., 98, 11 (2011) 112102-1-3
    doi: 10.1063/1.3567546
  10. Note: Fast and reliable fracture strain extraction technique applied to silicon at nanometer scale
    PASSI V., BHASKAR U., PARDOEN T., SODERVALL U., NILSSON B., PETERSSON G., HAGBERG M., RASKIN J.P., , , , , , ,
    Rev. Sci. Instrum., 82, 11 (2011) 116106-1-3
    doi: 10.1063/1.3655464
  11. TEM studies of PtSi low Schottky-barrier contacts for source/drain in MOS transistors
    LASZCZ A., RATAJCZAK J., CZERWINSKI A., KATCKI J., BREIL N., LARRIEU G., DUBOIS E.
    Cent. Eur. J. Phys., 9, 2 (2011) 423-427
    doi: 10.2478/s11534-010-0135-4
  12. Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation
    RECKINGER N., POLEUNIS C., DUBOIS E., DUTU C.A., TANG X.H., DELCORTE A., RASKIN J.P., , , , , , , ,
    Appl. Phys. Lett., 99, 1 (2011) 012110-1-3
    doi: 10.1063/1.3608159

Conferences

  1. A 10Gb/s 45mW adaptive 60GHz baseband in 65nm CMOS
    THAKKAR C., KONG L., JUNG K., FRAPPE A., ALON E.
    Symposia on VLSI Technology and Circuits, Kyoto, Japan, june 13-17
    (2011) 24-25, ISBN 978-1-61284-175-5
    http://ieeexplore.ieee.org/search/searchresult.jsp?arnumber=5986406
  2. A 20-23GHz coupled oscillators array in 65nm CMOS for HDR 60GHz beamforming applications
    EGOT M., MARTINEAU B., RICHARD O., ROLLAND N., CATHELIN A., KAISER A.
    37th European Solid-State Circuits Conference, ESSCIRC 2011, Helsinki, Finland, september 12-16
    (2011) paper ID 5262, 463-466, ISBN 978-1-4577-0704-9
    ftp://ftp.arces.unibo.it/pub/mguermandi/ESS2011/CIRC/Papers/C112-C3L-H5-5262.pdf
  3. A 7-bit 18th order 9.6 GS/s FIR filter for high data rate 60-GHz wireless communications
    MULLER J., STEFANELLI B., FRAPPE A., YE L., CATHELIN A., NIKNEJAD A., KAISER A.
    37th European Solid-State Circuits Conference, ESSCIRC 2011, Helsinki, Finland, september 12-16
    (2011) paper ID 5264, 67-70, ISBN 978-1-4577-0704-9
    ftp://ftp.arces.unibo.it/pub/mguermandi/ESS2011/CIRC/Papers/C013-A3L-E1-5264.pdf
  4. A broadband 0.6 to 1 THz CMOS imaging detector with an integrated lens
    AL HADI R., SHERRY H., GRZYB J., BAKTASH N., ZHAO Y., OJEFORS E., KAISER A., CATHELIN A., PFEIFFER U.
    IEEE MTT-S International Microwave Symposium, IMS 2011, Baltimore, MD, USA, june 5-10
    (2011) 1-4, ISBN 978-1-61284-754-2
    doi: 10.1109/MWSYM.2011.5972870
  5. CMOS integration using low thermal budget dopant-segregated metallic S/D junctions on thin-body SOI
    LARRIEU G., DUBOIS E., DUCATTEAU D., , , , , , , , , , , ,
    220th ECS Meeting and Electrochemical Energy Summit, Boston, MA, USA, october 9-14
    ECS Trans., 41, 7 (2011) 275-282
    doi: 10.1149/1.3633307
  6. Design of 10 GHz sampling rate digital FIR filters with powers-of-two coefficients
    PARENT B., MULLER J., KAISER A., CATHELIN A.
    20th European Conference on Circuit Theory and Design, ECCTD 2011, Linköping, Sweden, august 29-31
    (2011) 584-587, ISBN 978-1-4577-0617-2
    doi: 10.1109/ECCTD.2011.6043601
  7. Functionalization of silicon nanowires for specific sensing
    PASSI V., DUBOIS E., CELLE C., CLAVAGUERA S., SIMONATO J.P., RASKIN J.P., , , , , , , , ,
    219th ECS Meeting, E8 : Advanced Semiconductor-on-Insulator Technology and Related Physics, Montreal, QC, Canada, may 1-6
    ECS Trans., 35, 5 (2011) 313-318
    doi: 10.1149/1.3570811
  8. Lens-integrated THz imaging arrays in 65nm CMOS technologies
    SHERRY H., AL HADI R., GRZYB J., OJEFORS E., CATHELIN A., KAISER A., PFEIFFER U.R.
    IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011, Baltimore, MD, USA, june 5-7
    (2011) 1-4, ISBN 978-1-4244-8293-1
    http://dx.doi.org/10.1109/RFIC.2011.5940670
  9. Reconfigurable wide-band receiver with positive feed-back translational loop
    IZQUIERDO C., KAISER A., MONTAUDON F., CATHELIN P.
    IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011, Baltimore, MD, USA, june 5-7
    (2011) 1-4, ISBN 978-1-4244-8293-1
    doi: 10.1109/RFIC.2011.5940616
  10. Spectral regrowth analysis in wideband polar architectures applied to software defined radio
    WERQUIN A., FRAPPE A., MULLER J., KAISER A.
    9th IEEE International New Circuits and Systems Conference, NEWCAS 2011, Bordeaux, France, june 26-29
    (2011) 305-308, ISBN 978-1-61284-135-9
    doi: 10.1109/NEWCAS.2011.5981316
  11. Spurious emissions reduction using multirate RF transmitter
    WERQUIN A., FRAPPE A., KAISER A.
    IEEE International Symposium on Circuits and Systems, ISCAS 2011, Rio de Janeiro, Brazil, may 15-18
    (2011) 965-968, ISBN 978-1-4244-9473-6
    doi: 10.1109/ISCAS.2011.5937728
  12. TCAD study of the detection mechanisms in silicon nanoribbon-based gas sensors
    SILVESTRI L., REGGIANI S., PASSI V., RAVAUX F., DUBOIS E., RASKIN J.P., CLAVAGUERA S., CARELLA A., CELLE C., SIMONATO J.P.
    41st European Solid-State Device Research Conference, ESSDERC 2011, Helsinki, Finland, september 12-16
    (2011) paper ID 5173, 131-134, ISBN 978-1-4577-0708-7
    ftp://ftp.arces.unibo.it/pub/mguermandi/ESS2011/DERC/Papers/D029-A4L-D1-5173.pdf
  13. Schottky barrier height reduction using strained silicon-on-insulator and dopant segregation
    RAVAUX F., DUBOIS E., CHEN Z.K., , , , , , , , , , , ,
    37th International Conference on Micro and Nano Engineering, MNE 2011, Berlin, Germany, september 19-23
    Microelectron. Eng., 98 (2012) 391-394
    doi: 10.1016/j.mee.2012.05.045
2010

Articles

  1. A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum
    PASSI V., LECESTRE A., KRZEMINSKI C., LARRIEU G., DUBOIS E., RASKIN J.P., , , , , , , , ,
    Microelectron. Eng., 87, 10 (2010) 1872-1878
    doi: 10.1016/j.mee.2009.11.022
  2. Gold-free growth of GaAs nanowires on silicon: arrays and polytypism
    PLISSARD Sébastien, DICK Kimberly A., LARRIEU Guilhem, GODEY Sylvie, ADDAD Ahmed, WALLART Xavier, CAROFF Philippe, , , , , , , ,
    Nanotechnology, 21, 38 (2010) 385602-1-8
    doi: 10.1088/0957-4484/21/38/385602
  3. Graphene buffer layer on Si-terminated SiC studied with an empirical interatomic potential
    LAMPIN E., PRIESTER C., KRZEMINSKI C., MAGAUD L., , , , , , , , , , ,
    J. Appl. Phys., 107, 10 (2010) 103514-1-7
    doi: 10.1063/1.3357297

Conferences

  1. A FIR baseband filter for high data rate 60-GHz wireless communications
    MULLER J., CATHELIN A., NIKNEJAD A., KAISER A.
    IEEE International Symposium on Circuits and Systems, ISCAS 2010, Paris, France, may 30-june 2
    (2010) 1771-1774, ISBN 978-1-4244-5308-5
    doi: 10.1109/ISCAS.2010.5537620
  2. Backgate bias and stress level impact on giant piezoresistance effect in thin silicon films and nanowires
    PASSI V., RASKIN J.P., RAVAUX F., DUBOIS E.
    23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010, Hong Kong SAR, China, january 24-28
    (2010) 464-467, ISBN 978-1-4244-5761-8
    doi: 10.1109/MEMSYS.2010.5442464
  3. Digital compensation of the power amplifier nonlinearities at relay station receivers in 802.16j very high data rate systems
    ZELENY J., ROSSON P., DEHOS C., KAISER A.
    IEEE Radio and Wireless Symposium, RWS 2010, New Orleans, LA, USA, january 10-14
    (2010) 244-247, ISBN 978-1-4244-4725-1
    doi: 10.1109/RWS.2010.5434157
  4. Synthesis and characterization of crystalline silicon ribbons on insulator using catalytic Vapor-Liquid-Solid growth inside a cavity
    LECESTRE A., DUBOIS E., VILLARET A., CORONEL P., SKOTNICKI T., DELILLE D., MAURICE C., TROADEC D.
    6th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2010, Grenoble, France, january 25-27
    (2010) 99-100
  5. Wide-band receiver architecture with flexible blocker filtering techniques
    IZQUIERDO C., KAISER A., MONTAUDON F., CATHELIN P.
    17th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2010, Athens, Greece, december 12-15
    (2010) 894-897, ISBN 978-1-4244-8155-2
    doi: 10.1109/ICECS.2010.5724656
  6. Realization of ultra dense arrays of vertical silicon nanowires with defect free surface and perfect anisotropy using a top-down approach
    HAN X.L., LARRIEU G., FAZZINI P.F., DUBOIS E., , , , , , , , , , ,
    36th International Conference on Micro & Nano Engineering, MNE 2010, Genoa, Italy, september 19-22
    Microelectron. Eng., 88, 8 (2011) 2622-2624
    doi: 10.1016/j.mee.2010.12.102
2009

Articles

  1. A simple method for measuring Si-Fin sidewall roughness by AFM
    TANG X.H., BAYOT V., RECKINGER N., FLANDRE D., RASKIN J.P., DUBOIS E., NYSTEN B., , , , , , , ,
    IEEE Trans. Nanotechnol., 8, 5 (2009) 611-616
    doi: 10.1109/TNANO.2009.2021064
  2. An all-digital RF signal generator using high-speed ΔΣ modulators
    FRAPPE A., FLAMENT A., STEFANELLI B., KAISER A., CATHELIN A., , , , , , , , , ,
    IEEE J. Solid-State Circuits, 44, 10 (2009) 2722-2732
    doi: 10.1109/JSSC.2009.2028406
  3. An electrical evaluation method for the silicidation of silicon nanowires
    TANG X., RECKINGER N., BAYOT V., FLANDRE D., DUBOIS E., YAREKHA D.A., LARRIEU G., LECESTRE A., RATAJCZAK J., BREIL N., PASSI V., RASKIN J.P.
    Appl. Phys. Lett., 95, 2 (2009) 023106-1-3
    doi: 10.1063/1.3171929
  4. Arsenic-segregated rare-earth silicide junctions: reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI
    LARRIEU G., YAREKHA D.A., DUBOIS E., BREIL N., FAINOT O., , , , , , , , , ,
    IEEE Electron Device Lett., 30, 12 (2009) 1266-1268
    doi: 10.1109/LED.2009.2033085
  5. Enhanced carrier injection in Schottky contacts using dopant segregation: a Monte Carlo research
    PASCUAL E., MARTIN M.J., RENGEL R., LARRIEU G., DUBOIS E., , , , , , , , , ,
    Semicond. Sci. Technol., 24, 2 (2009) 025022-1-6
    doi: 10.1088/0268-1242/24/2/025022
  6. Molecular dynamics simulations of the solid phase epitaxy of Si: growth mechanism and orientation effects
    LAMPIN E., KRZEMINSKI C., , , , , , , , , , , , ,
    J. Appl. Phys., 106, 6 (2009) 063519-1-8
    doi: 10.1063/1.3211972
  7. Optimization of RF performance of metallic source/drain SOI MOSFETs using dopant segregation at the Schottky interface
    VALENTIN R., DUBOIS E., LARRIEU G., RASKIN J.P., DAMBRINE G., BREIL N., DANNEVILLE F., , , , , , , ,
    IEEE Electron Device Lett., 30, 11 (2009) 1197-1199
    doi: 10.1109/LED.2009.2031254
  8. Process optimization and downscaling of a single electron single dot memory
    KRZEMINSKI C., TANG X., RECKINGER N., BAYOT V., DUBOIS E.
    IEEE Trans. Nanotechnol., 8, 6 (2009) 737-748
    doi: 10.1109/TNANO.2009.2021653
  9. Reconfigurable complex digital delta-sigma modulator synthesis for digital wireless transmitters
    NZEZA C.N., KAISER A., CATHELIN A.
    Rev. Roum. Sci. Tech.-Ser. Electro., 54, 4 (2009) 385-394
    http://www.revue.elth.pub.ro/index.php?action=details&id=197
  10. Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing
    RECKINGER N., TANG X.H., BAYOT V., YAREKHA D.A., DUBOIS E., GODEY S., WALLART X., LARRIEU G., LASZCZ A., RATAJCZAK J., JACQUES P.J., RASKIN J.P., , ,
    Appl. Phys. Lett., 94, 19 (2009) 191913-1-3
    doi: 10.1063/1.3136849

Conferences

  1. A 60GHz 65nm CMOS RMS power detector for antenna impedance mismatch detection
    GORISSE J., CATHELIN A., KAISER A., KERHERVE E.
    35th European Solid-State Circuits Conference, ESSCIRC 2009, Athens, Greece, september 14-18
    (2009) 172-175, ISBN 978-1-4244-4354-3
    doi: 10.1109/ESSCIRC.2009.5326027
  2. A combined 4-bit quadrature digital-to-analog converter/mixer for millimeter-wave applications
    FLAMENT A., LOMBARD P., STEFANELLI B., CATHELIN A., KAISER A.
    16th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2009, Hammamet, Tunisia, december 13-16
    (2009) 964-967, ISBN 978-1-4244-5090-9
    doi: 10.1109/ICECS.2009.5410814
  3. A digital cartesian feedback path design for 2.4GHz ISM band standards
    ZELENY J., WURM P., VINCENT P., KAISER A.
    16th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2009, Hammamet, Tunisia, december 13-16
    (2009) 523-526, ISBN 978-1-4244-5090-9
    doi: 10.1109/ICECS.2009.5410877
  4. Automated identification of clusters and UWB channel parameters dependency on Tx-Rx distance
    MASSOURI A., CHEN J., CLAVIER L., COMBEAU P., POUSSET Y.
    3rd European Conference on Antennas and Propagation, EuCAP 2009, Berlin, Germany, march 23-27
    (2009) 3663-3667, ISBN 978-1-4244-4753-4
    http://ieeexplore.ieee.org/search/searchresult.jsp?arnumber=5068385
  5. Complete BAW filtered CMOS 90nm digital RF signal generator
    FLAMENT A., GIRAUD S., BILA S., CHATRAS M., FRAPPE A., STEFANELLI B., KAISER A., CATHELIN A.
    Joint IEEE North-East Workshop on Circuits and Systems and TAISA Conference, NEWCAS-TAISA’09, Toulouse, France, june 28-july 1
    (2009) 43-46, ISBN 978-1-4244-4573-8
    doi: 10.1109/NEWCAS.2009.5290423
  6. Confined and guided catalytic growth of crystalline silicon films on a dielectric substrate
    LECESTRE A., DUBOIS E., VILLARET A., CORONEL P., SKOTNICKI T., DELILLE D., MAURICE C., TROADEC D., , , , , , ,
    European Materials Research Society Spring Meeting, E-MRS Spring 2009, Symposum K : Semiconductor nanostructures towards electronic and optoelectronic device applications II, Strasbourg, France, june 8-12
    IOP Conf. Series : Mater. Sci. Eng., 6, 1 (2009) 012022-1-6
    doi: 10.1088/1757-899X/6/1/012022
  7. Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs
    LARRIEU G., YAREKHA D.A., DUBOIS E., DERESMES D., BREIL N., RECKINGER N., TANG X., HALIMAOUI A.
    215th ECS Meeting , Silicon-on-Insulator Technology and Devices, San Francisco, CA, USA, may 24-29
    ECS Trans., 19, 4 (2009) 201-207, non réferencé dans ISI Web of Knowledge
    doi: 10.1149/1.3117410
  8. TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs
    RATAJCZAK J., LASZCZ A., CZERWINSKI A., KATCKI J., TANG X., RECKINGER N., YAREKHA D.A., LARRIEU G., DUBOIS E., , , , , ,
    3rd National Conference on Nanotechnology, NANO’2009, Warsaw, Poland, june 22-26
    Acta Phys. Pol. A, 116, supplement (2009) 89-91
    http://przyrbwn.icm.edu.pl/APP/ABSTR/116/a116-s-23.html
  9. UHV fabrication of the ytterbium silicide as potential low schottky barrier S/D contact material for N-type MOSFET
    YAREKHA D.A., LARRIEU G., BREIL N., DUBOIS E., GODEY S., WALLART X., SOYER C., REMIENS D., RECKINGER N., TANG X., LASZCZ A., RATAJCZAK J., HALIMAOUI A., ,
    215th ECS Meeting , Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS, San Francisco, CA, USA, may 24-29
    ECS Trans., 19, 1 (2009) 339-344
    doi: 10.1149/1.3118961
  10. Characterization of ytterbium silicide formed in ultra high vacuum
    LASZCZ A., RATAJCZAK J., CZERWINSKI A., KATCKI J., SROT V., PHILLIPP F., VAN AKEN P.A., YAREKHA D., RECKINGER N., LARRIEU G., DUBOIS E., , , ,
    16th International Conference on Microscopy of Semiconducting Materials, MSM XVI, Oxford, UK, march 17-20
    J. Phys. : Conf. Ser., 209, 1 (2010) 012056-1-4
    doi: 10.1088/1742-6596/209/1/012056
  11. Confined VLS growth and structural characterization of silicon nanoribbons
    LECESTRE A., DUBOIS E., VILLARET A., SKOTNICKI T., CORONEL P., PATRIARCHE G., MAURICE C., , , , , , , ,
    35th International Conference on Micro & Nano Engineering, MNE 2009, Ghent, Belgium, september 28-october 1
    Microelectron. Eng., 87, 5-8 (2010) 1522-1526
    doi: 10.1016/j.mee.2009.11.053
  12. Realization of vertical silicon nanowire networks with an ultra high density using a top-down approach
    HAN X.L., LARRIEU G., DUBOIS E., , , , , , , , , , , ,
    International Conference on Nanoscience and Technology, ChinaNANO 2009, Beijing, China, september 1-3
    J. Nanosci. Nanotechnol., 10, 11 (2010) 7423-7427
    doi: 10.1166/jnn.2010.2841
2008

Articles

  1. Automatic DC operating point computation and design plan generation for analog IPs
    ISKANDER R., LOUERAT M.M., KAISER A., , , , , , , , , , , ,
    Analog Integr. Circuits Process., 56, 1-2 (2008) 93-105
    doi: 10.1007/s10470-007-9075-3
  2. Characterization of ultrathin SOI film and application to short channel MOSFETs
    TANG X., RECKINGER N., LARRIEU G., DUBOIS E., FLANDRE D., RASKIN J.P., NYSTEN B., JONAS A.M., BAYOT V., , , , , ,
    Nanotechnology, 19, 16 (2008) 165703-1-7
    doi: 10.1088/0957-4484/19/16/165703
  3. Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance
    LARRIEU G., DUBOIS E., YAREKHA D., BREIL N., RECKINGER N., TANG X., RATAJCZAK J., LASZCZ A., , , , , , ,
    Mater. Sci. Eng. B-Solid State Mater. Adv. Technol., 154-155 (2008) 159-162
    doi: 10.1016/j.mseb.2008.10.014
  4. Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process
    BREIL N., DUBOIS E., HALIMAOUI A., POUYDEBASQUE A., LARRIEU G., LASZCZ A., RATAJCAK J., SKOTNICKI T., , , , , , ,
    IEEE Electron Device Lett., 29, 2 (2008) 152-154
    doi: 10.1109/LED.2007.914090
  5. Low Schottky barrier height for ErSi2-x/n-Si contacts formed with a Ti cap
    RECKINGER N., TANG X., BAYOT V., YAREKHA D.A., DUBOIS E., GODEY S., WALLART X., LARRIEU G., LASZCZ A., RATAJCZAK J., JACQUES P.J., RASKIN J.P., , ,
    J. Appl. Phys., 104, 10 (2008) 103523-1-9
    doi: 10.1063/1.3010305
  6. RF small-signal analysis of Schottky-barrier p-MOSFETs
    VALENTIN R., DUBOIS E., RASKIN J.P., LARRIEU G., DAMBRINE G., LIM T.C., BREIL N., DANNEVILLE F., , , , , , ,
    IEEE Trans. Electron Devices, 55, 5 (2008) 1192-1202
    doi: 10.1109/TED.2008.919382
  7. Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/SiO2/Si structure
    LASZCZ A., RATAJCZAK J., CZERWINSKI A., KATCKI J., SROT V., PHILLIPP F., VAN AKEN P.A., BREIL N., LARRIEU G., DUBOIS E., , , , ,
    Mater. Sci. Eng. B-Solid State Mater. Adv. Technol., 154-155 (2008) 175-178
    doi: 10.1016/j.mseb.2008.10.002

Conferences

  1. A 1.2 GHz semi-digital reconfigurable FIR bandpass filter with passive power combiner
    FLAMENT A., FRAPPE A., KAISER A., STEFANELLI B., CATHELIN A., EZZEDDINE H.
    34th European Solid-State Circuits Conference, ESSCIRC 2008, Edinburgh, Scotland, UK, september 15-19
    (2008) 418-421, ISBN 978-1-4244-2361-3
    doi: 10.1109/ESSCIRC.2008.4681881
  2. A 60GHz CMOS RMS power detector for antenna impedance mismatch detection
    GORISSE J., CATHELIN A., KAISER A., KERHERVE E.
    Joint 6th International IEEE Northeast Workshop on Circuits and Systems and TAISA Conference, NEWCAS-TAISA’08, Montreal, Québec, Canada, june 22-25
    (2008) 93-96, ISBN 978-1-4244-2331-6
    doi: 10.1109/NEWCAS.2008.4606329
  3. All-digital RF signal generation for software defined radio
    FRAPPE A., FLAMENT A., STEFANELLI B., CATHELIN A., KAISER A.
    4th European Conference on Circuits and Systems for Communications, ECCSC 2008, Bucharest, Romania, july 10-11
    (2008) 236-239, ISBN 978-1-4244-2419-1
    doi: 10.1109/ECCSC.2008.4611684
  4. An all-digital ΔΣ RF signal generator for mobile communication transmitters in 90nm CMOS
    FRAPPE A., STEFANELLI B., FLAMENT A., KAISER A., CATHELIN A.
    IEEE Radio Frequency Integrated Circuits Symposium, IEEE RFIC 2008, Atlanta, GA, USA, june 15-17
    (2008) 13-16, ISBN: 978-1-4244-1808-4
    doi: 10.1109/RFIC.2008.4561375
  5. Investigation on the platinum silicide Schottky barrier height modulation using a dopant segregation approach
    BREIL N., HALIMAOUI A., DUBOIS E., LAMPIN E., GODET L., PAPASOULIOTIS G., LARRIEU G., SKOTNICKI T.
    Materials Research Society Spring Meeting, MRS Spring 2008, Symposium E : Doping Engineering for Front-End Processing, San Francisco, CA, USA, march 24-28
    Mater. Res. Soc. Symp. Proc., 1070 (2008) 85-90
    http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=12446&DID=212716
  6. NANOSIL Network of Excellence : silicon-based nanostructures and nanodevices for long-term nanoelectronics applications
    BALESTRA F., PARKER E., LEADLEY D., MANTL S., DUBOIS E., ENGSTROM O., CLERC R., CRISTOLOVEANU S., KURZ H., RASKIN J.P., LEMME M., IONESCU A., KASPER E., KARMOUS A., BAUS M.
    European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, Strasbourg, France, may 26-30
    Mater. Sci. Semicond. Process., 11, 5 (2008) 148-159
    doi: 10.1016/j.mssp.2008.09.017
  7. Reconfigurable complex digital Delta-Sigma modulator synthesis for digital wireless transmitters
    NZEZA C.N., FLAMENT A., FRAPPE A., KAISER A., CATHELIN A., MULLER J.
    4th European Conference on Circuits and Systems for Communications, ECCSC 2008, Bucharest, Romania, july 10-11
    (2008) 320-325, ISBN 978-1-4244-2419-1
    doi: 10.1109/ECCSC.2008.4611701
  8. Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications
    RATAJCZAK J., LASZCZ A., CZERWINSKI A., KATCKI J., PHILLIPP F., VAN AKEN P.A., RECKINGER N., DUBOIS E., , , , , , ,
    XIII International Conference on Electron Microscopy, EM’2008, Cracow-Zakopane, Poland, june 8-11
    J. Microsc., 237, 3 (2010) 379-383
    doi: 10.1111/j.1365-2818.2009.03264.x
2007

Articles

  1. A switchable-order Gm-C baseband filter with wide digital tuning for configurable radio receivers
    CHAMLA D., KAISER A., CATHELIN A., BELOT D.
    IEEE J. Solid-State Circuits, 42, 7 (2007) 1513-1521
    doi: 10.1109/JSSC.2007.899125
  2. Complete system for wireless powering and remote control of electrostatic actuators by inductive coupling
    BASSET P., KAISER A., LEGRAND B., COLLARD D., BUCHAILLOT L.
    IEEE-ASME Trans. Mechatron., 12, 1 (2007) 23-31
    doi: 10.1109/TMECH.2006.886245
  3. Kinetics, stoichiometry, morphology and current drive capabilities of Ir-based silicides
    LARRIEU G., DUBOIS E., WALLART X., KATCKI J.
    J. Appl. Phys., 102, 9 (2007) 094504-1-7
    doi: 10.1063/1.2802564
  4. Molecular dynamics simulation of the recrystallization of amorphous Si layers : comprehensive study of the dependence of the recrystallization velocity on the interatomic potential
    KRZEMINSKI C., BRULIN Q., CUNY V., LECAT E., LAMPIN E., CLERI F.
    J. Appl. Phys., 101, 12 (2007) 123506/1-11
    doi: 10.1063/1.2743089
  5. Selective etching of Pt with respect to PtSi using a sacrificial low temperature germanidation process
    BREIL N., HALIMAOUI A., SKOTNICKI T., DUBOIS E., LARRIEU G., LASZCZ A., RATAJCZAK J., ROLLAND G., POUYDEBASQUE A.
    Appl. Phys. Lett., 91, 23 (2007) 232112-1-3
    doi: 10.1063/1.2821143
  6. Silicon dry oxidation kinetics at low temperature in the nanometric range: modeling and experiment
    KRZEMINSKI C., LARRIEU G., PENAUD J., LAMPIN E., DUBOIS E.
    J. Appl. Phys., 101, 6 (2007) 064908-1-8
    doi: 10.1063/1.2711764
  7. Spacer-first damascene-gate FinFET architecture featuring stringer-free integration
    CORNU-FRULEUX F., PENAUD J., DUBOIS E., CORONEL P., LARRIEU G., SKOTNICKI T.
    IEEE Electron Device Lett., 28, 6 (2007) 523-526
    doi: 10.1109/LED.2007.897443
  8. X-ray photoelectron spectroscopy study of the oxidation of Se passivated Si(001)
    AGUIRRE-TOSTADO F.S., LAYTON D., HERRERA-GOMEZ A., WALLACE R.M., ZHU J., LARRIEU G., MALDONADO E., KIRK W.P., TAO M.
    J. Appl. Phys., 102, 8 (2007) 084901-1-7
    doi: 10.1063/1.2794858

Conferences

  1. 80 GHz low noise amplifiers in 65 nm CMOS SOI
    MARTINEAU B., CATHELIN A., DANNEVILLE F., KAISER A., DAMBRINE G., LEPILLIET S., GIANESELLO F., BELOT D., , , , , , ,
    33rd European Solid-State Circuits Conference, ESSCIRC2007, Munich, Germany, september 11-13
    (2007) 348-351
    doi: 10.1109/ESSCIRC.2007.4430315
  2. A 2GHz 0.25µm SiGe BiCMOS oscillator with flip-chip mounted BAW resonator
    RAZAFIMANDIMBY S., CATHELIN A., LAJOINIE J., BELOT D., KAISER A.
    IEEE International Solid-State Circuits Conference, ISSCC 2007, San Francisco, CA, USA, february 11-15
    (2007) 580-581
    doi: 10.1109/ISSCC.2007.373553
  3. An original selective etch of Pt vs PtSi using a low temperature germanidation process
    BREIL N., HALIMAOUI A., DUBOIS E., LARRIEU G., RATAJCZAK J., ROLLAND G., POUYDEBASQUE A., SKOTNICKI T.
    211th Electrochemical Society Meeting, Chicago, IL, USA, may 6-10
    (2007)
  4. Digital tuning of an analog tunable bandpass BAW-filter at GHz frequency
    RAZAFIMANDIMBY S., TILHAC C., CATHELIN A., KAISER A., BELOT D.
    33rd European Solid-State Circuits Conference, ESSCIRC2007, Munich, Germany, september 11-13
    (2007) 218-221
    doi: 10.1109/ESSCIRC.2007.4430284
  5. Direct digital RF signal generation for software-defined radio transmitters using reconfigurable delta-sigma modulators
    NSIALA-NZEZA C., FRAPPÉ A., GORISSE J., FLAMENT A., STEFANELLI B., CATHELIN A., KAISER A.
    11th International Symposium on Microwave and Optical Technology, ISMOT-2007, Monte Porzio Catone, Italy, december 17-21
    (2007) 221-224
  6. Dual silicide integration of low Schottky-barrier source-drain in a spacer-first damascene-metal-gate FinFET architecture
    CORNU-FRULEUX F., PENAUD J., DUBOIS E., CORONEL P., LARRIEU G., BREIL N., DELILLE D., SKOTNICKI T.
    12th Silicon Nanoelectronics Workshop, SNW 2007, Kyoto, Japan, june 10-11
    (2007)
  7. Erbium silicide formation under ultra high vacuum
    BREIL N., DUBOIS E., MORAND Y., CARRON V., HALIMAOUI A., SKOTNICKI T.
    16th European Workshop on Materials for Advanced Metallization, MAM 2007, Bruges, Belgium, march 4-7
    (2007)
  8. Impact of n-type channel implantation on performance of p-type Schottky barrier MOSFETs
    BREIL N., DUBOIS E., POUYDEBASQUE A., SKOTNICKI T.
    12th Silicon Nanoelectronics Workshop, SNW 2007, Kyoto, Japan, june 10-11
    (2007)
  9. Investigations of high frequency performance of Schottky-barrier MOSFETs
    VALENTIN R., DUBOIS E., RASKIN J.P., DAMBRINE G., LARRIEU G., BREIL N., DANNEVILLE F., , , , , , , ,
    7th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2007, Long Beach, CA, USA, january 10-12
    (2007) 32-35, ISBN 978-0-7803-9764-4
    doi: 10.1109/SMIC.2007.322762
  10. Low temperature implementation of dopant-segregated band-edge metallic S/D junctions in thin-body SOI p-MOSFETs
    LARRIEU G., DUBOIS E., VALENTIN R., BREIL N., DANNEVILLE F., DAMBRINE G., PESANT J.C., , , , , , , ,
    IEEE International Electron Devices Meeting, IEDM 2007, Washington, DC, USA, december 10-12
    (2007) 147-150, ISBN 978-1-4244-1508-3
    doi: 10.1109/IEDM.2007.4418886
  11. Reconfigurable digital delta-sigma modulator synthesis for digital wireless transmitters
    NSIALA-NZÉZA C., GORISSE J., FRAPPÉ A., FLAMENT A., KAISER A., CATHELIN A.
    18th European Conference on Circuit Theory and Design, ECCTD’07, Sevilla, Spain, august 26-30
    (2007) 480-483
  12. Systematic offset detection and evaluation using hierarchical graph-based sizing and biasing
    ISKANDER R., LOUERAT M.M., KAISER A.
    50th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS’07, Montreal, Canada, august 5-8
    (2007) 984-987
  13. TEM study of the silicidation process in Pt/Si and Ir/Si structures
    LASZCZ A., RATAJCZAK J., CZERWINSKI A., KATCKI J., BREIL N., LARRIEU G., DUBOIS E.
    15th International Conference on Microscopy of Semiconducting Materials, MSMXV, Cambridge, UK, april 2-5
    (2007)
  14. A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes : influence of direct quantum tunnelling and temperature
    PASCUAL E., RENGEL R., RECKINGER N., TANG X., BAYOT V., DUBOIS E., MARTIN M.J., , , , , , , ,
    15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS-15, Tokyo, Japan, july 23-27
    Phys. Status Sol. C, Curr. Top. Solid State Phys., 5, 1 (2008) 119-122
    doi: 10.1002/pssc.200776519
2006

Articles

  1. Coupled-resonator micromechanical filters with voltage tunable bandpass characteristic in thickfilm polysilicon technology
    GALAYKO D., KAISER A., LEGRAND B., BUCHAILLOT L., COMBI C., COLLARD D.
    Sens. Actuator A-Phys., 126, 1 (2006) 227-240
    doi: 10.1016/j.sna.2005.10.033
  2. Diffusion of boron in silicon : compatibility of empirical molecular dynamics with continuum simulations
    CUNY V., BRULIN Q., LAMPIN E., LECAT E., KRZEMINSKI C., CLERI F.
    EPL-Europhys. Lett., 76, 5 (2006) 842-848
    doi: 10.1209/epl/i2006-10334-y
  3. Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices
    TANG X., RECKINGER N., BAYOT V., KRZEMINSKI C., DUBOIS E., VILLARET A., BENSAHEL D.C.
    IEEE Trans. Nanotechnol., 5, 6 (2006) 649-656
    doi: 10.1109/TNANO.2006.883481
  4. TEM characterisation of the erbium silicide formation process using a Pt/Er stack on the silicon-on-insulator substrate
    LASZCZ A., KATCKI J., RATAJCZAK J., TANG X., DUBOIS E.
    J. Microsc., 224, 1 (2006) 38-41
    doi: 10.1111/j.1365-2818.2006.01653.x

Conferences

  1. [Invited] Integration and performance of Schottky junction SOI devices
    DUBOIS E., LARRIEU G.
    6th International Workshop on Junction Technology, IWJT-2006, Shanghai, China, may 15-16
    (2006) 153-159
    http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1669469
  2. A wideband LNA for wireless multistandard receiver in 130nm CMOS SOI process
    MARTINEAU B., TINELLA C., GIANESELLO F., CATHELIN A., BELOT D., DANNEVILLE F., KAISER A., , , , , , , ,
    2nd Conference on Research in Microelectronics and Electronics, IEEE PRIME 2006, Otranto, Italy, june 12-15
    (2006) 449-452
    http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1689990
  3. All digital RF signal generation for software defined radio
    FRAPPÉ A., FLAMENT A., STEFANELLI B., CATHELIN A., KAISER A.
    3rd IEEE International Conference on Circuits and Systems for Communications, ICCSC’06, Bucharest, Romania, july 6-7
    (2006) 171-174
  4. An electronically tunable bandpass BAW-filter for a zero-IF WCDMA receiver
    RAZAFIMANDIMBY S., TILHAC C., CATHELIN A., KAISER A., BELOT D.
    32nd European Solid-State Circuits Conference, ESSCIRC 2006, Montreux, Switzerland, september 19-21
    (2006) 142-145
    doi: 10.1109/ESSCIR.2006.307551
  5. Convertisseur numérique analogique 1 bit à 7,8Gech/s pour émetteurs RF numériques en technologie CMOS 90nm
    FLAMENT A., FRAPPÉ A., STEFANELLI B., KAISER A., CATHELIN A.
    7ème Colloque sur le Traitement Analogique de l’Information, du Signal et ses Applications, TAISA’2006, Strasbourg, France, 19-20 octobre
    (2006) 115-118
  6. Design techniques for very high speed digital delta-sigma modulators aimed at all-digital RF transmitters
    FRAPPÉ A., FLAMENT A., STEFANELLI B., KAISER A., CATHELIN A.
    13th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2006, Nice, France, december 10-13
    (2006) 1113-1116
    doi: 10.1109/ICECS.2006.379634
  7. Digital tuning of Gm-C baseband filters in configurable radio receivers
    CHAMLA D., CATHELIN A., DEDIEU S., KAISER A.
    32nd European Solid-State Circuits Conference, ESSCIRC 2006, Montreux, Switzerland, september 19-21
    (2006) 340-343
    doi: 10.1109/ESSCIR.2006.307600
  8. Fabrication and analysis of CMOS fully-compatible high conductance impact-ionization MOS (I-MOS) transistors
    CHARBUILLET C., DUBOIS E., MONFRAY S., BOUILLON P., SKOTNICKI T.
    36th European Solid-State Device Research Conference, ESSDERC 2006, Montreux, Switzerland, september 18-22
    (2006) 299-302
    doi: 10.1109/ESSDER.2006.307697
  9. Hierarchical graph-based sizing for analog cells through reference transistors
    ISKANDER R., KAISER A., LOUERAT M.M.
    2nd Conference on Research in Microelectronics and Electronics, IEEE PRIME 2006, Otranto, Italy, june 12-15
    (2006) 321-324
    http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1689961
  10. High current drive in ultra-short impact ionization MOS (I-MOS) devices
    CHARBUILLET C., MONFRAY S., DUBOIS E., BOUILLON P., SKOTNICKI T.
    International Electron Device Meeting, IEDM 2006, San Francisco, CA, USA, december 11-13
    (2006) 1-4
    doi: 10.1109/IEDM.2006.346983
  11. Influence of gate offset spacer width on SOI MOSFETs HF properties
    VALENTIN R., SILIGARIS A., PAILLONCY G., DUBOIS E., DAMBRINE G., DANNEVILLE F., , , , , , , , ,
    IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, San Diego, CA, USA, january 18-20
    (2006) 77-80
    doi: 10.1109/SMIC.2005.1587911
  12. Iridium silicide : a promising electrode for metallic source/drain in decananometer MOSFETs
    LARRIEU G., DUBOIS E., WALLART X., KATCKI J.
    210th Meeting of the Electrochemical Society, Cancun, Mexico, october 29-november 3
    Trans. Electrochem. Soc., 3, 2 (2006) 123-129, non réferencé dans ISI Web of Knowledge
    doi: 10.1149/1.2356271
  13. Optimizing resistances and capacitances of a continuous-time ΣΔ ADC
    DE LAMARRE L., LOUERAT M.M., KAISER A.
    13th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2006, Nice, France, december 10-13
    (2006) 419-422
    doi: 10.1109/ICECS.2006.379814
  14. Remote actuation of independant electrostatic distributed micromechanical systems (DMMS) for a wireless microrobot
    BASSET P., BUCHAILLOT L., COLLARD D., KAISER A.
    32nd Annual Conference of the IEEE Industrial Electronics Society, IEEE IECON’06, Paris, France, november 7-10
    (2006) 3078-3083
    doi: 10.1109/IECON.2006.347739
  15. TEM study of PtSi contacts layers for low Schottky barrier MOSFETs
    LASZCZ A., KATCKI J., RATAJCZAK J., CZERWINSKI A., BREIL N., LARRIEU G., DUBOIS E.
    European Material Research Society Spring Meeting, E-MRS – IUMRS – ICEM 06, Si-based Materials for Advanced Microelectronic Devices : Synthesis, Defects and Diffusion, Nice, France, may 29-june 2
    Nucl. Instrum. Methods Phys. Res. Sect. B-Beam Interact. Mater. Atoms, 253, 1-2 (2006) 274-277
    doi: 10.1016/j.nimb.2006.10.033