In the Microwave Power Devices group, the main activities regards devices based on wide bandgap semiconductors (mainly GaN) dédicated to micowave power applications and power electronics. Other activities are developed in the frame of the common laboratory IEMN/ST MICROELECTRONICS (BiCMOS, HBT Si/Ge…).

Some main recent activities are the following:

1) AlGaN/GaN HEMTs fabrication on Silicon substrate, GaN substrate and Silicon Carbide substrate
2) Development of specific technological process to improve thermal management in GaN HEMTs
3) Characterization and modeling for the design, the fabrication and the characterization of GaN based embedded power converters