Marie LESECQ is currently an Assistant Professor at Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), Villeneuve d’Ascq, France. Since 2010, Marie Lesecq is leading research activities for GaN based devices at IEMN. Her skills include devices processing and characterization. She is responsible within the Microwave Power Devices research group at IEMN concerning devices fabrication in clean room. She is co-author of about 40 publications and communications. Since 2010, she was involved in several French national ANR projects and European contracts and in many national clusters (GaNEX, LEAF, CPER CIA). The projects involve the main academic and industrial laboratories and players involved in GaN electronics such as CRHEA, LAAS, OMMIC, … She managed six PhD dedicated to the GaN technology.

Actual Position

Associate Professor

• Microwave Power Devices research group at IEMN (Institut d’Electronique de Microélectronique et de Nanotechnologies, Villeneuve d’Ascq)
• Research topic: Technological fabrication and Electrical characterization of advanced wide-bandgap based devices (HEMTs) for high frequency/high power applications
• Teaching at IUT A (Institut Universitaire de Technologie), University of Lille

Skills And Other Contributions

• Technological process development of GaN based HEMTs
• Electrical and microwave characterization
• Strong implication within scientific projects (redaction of proposals, scientific responsible, reports…): ANR CREATIVEPI, ANR SATELLITE, ANR FLEXIGaN ANR GoSIMP
• Responsible for the device fabrication tasks in clean room within the Power Devices group at IEMN
• Supervisor of PhD’s
• Implication in staff responsible of cleanroom at IEMN

Cursus

• 2007 : Ph.D in Micro-Nanotechnologies IEMN, University of  Lille

Thesis work entitled: « Fonctionnalités actives en optique  intégrée à base de fils optiques en filière InP : application à la commutation optique »

• 2004 : M.Sc in Micro-Nanotechnologies

M.Eng at Ecole Polytechnique Universitaire de Lille