Our expertise includes etching of various III/V materials, silicon technology materials such as TaN, TiN, dielectrics, exotic materials such as magnetic, piezoelectric or ferroelectric materials and surface treatments and preparations. To perform these etchings, we have at our disposal 2 RIE systems Plasmalab 80+ (Oxford), a 2-chamber ICP-RIE system Plasmalab 100 (Oxford) and an ICP-RIE system from Sentech. A large number of materials can be etched thanks to the diversity of available gases: N2, O2, Ar, He, SF6, C4F8, CHF3, CH4, H2, CF4, SiCl4, BCl3, Cl2. 4 inch wafers are used but it is possible to etch pieces by simple gluing on a support wafer. We also use RF O2 plasmas (pico) for surface treatments and preparations, as well as a stripper (PVA Tepla 300) for etching and surface preparations by O2/CF4 microwave plasma.

Expertise and know-how: 3 key points