- Controlled etching of III/V materials such as GaAs, InP, InGaAs, GaSb, GaN,... by ICP in a chlorinated medium.
Realization of a GaSb based I-MOSFET (Anode team)
- Control through a comparative study of the selectivity of e-beam resins (PMMA, ZEP, CSAR) in ICP or RIE plasmas of SF6 or Cl2 chemistry
Behavior of ZEP resin during 50 nm pitch 150 nm trench etching (collaborative study of lithography and etching resources).
- Etching of multilayer magneto-electric assemblies
Etching of a PMN-PT microstructure by plasma ICP-RIE Chlorine (Aiman-films group)
Expertise and know-how: other
- Surface treatments and cleaning by O2, SF6/O2 or Ar/O2 plasma
- Surface preparation before anodic or thermal bonding by microwave O2 plasma
- Silicon etching in RIE and ICP-RIE, including Si nanowire formation,...
- Deburring and de-flashing of etching flanks after Bosch process to improve component performance without scaloping