Wet etching and surface preparation
Chemistry areas
Grouped in 2 rooms, 17 workstations with laminar flow dedicated to families of chemical products allow the use of acids, bases, solvents, resins,... to perform a large number of operations on substrates such as
- Selective wet etching, anisotropic or isotropic, controlled slow etching, release of micro/nanostructures or active surface transfers, lift off, creation of nanowires by etching, creation of porous silicon,...
- Surface cleaning: organic/metallic/particulate decontamination, surface preparation, deoxidation, megasonic cleaning,...
The first room is particularly adapted for silicon technology because of its thermostatically controlled wet etching baths (KOH, TMAH) and its VLSI products. The second room, initially designed for III/V compounds, is now used for the whole range of substrates.
Know-how: some highlights
- Anisotropic etching of silicon with KOH through an etching mask
KOH etching of a tilted grating in silicon, 54.75° angle (opto group).
- Controlled etching of III/V materials
Release of microstructures by wet etching III/V (Anode group)
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