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PLATEFORME : CENTRALE DE MICRO NANO FABRICATION
Slide thumbnailPLATEFORME : CENTRALE DE MICRO NANO FABRICATION
PLATEFORME : CENTRALE DE MICRO NANO FABRICATION
PLATEFORME : CENTRALE DE MICRO NANO FABRICATION

Chemical vapor etching

A l’IEMN, nous avons développé depuis plusieurs années un savoir-faire dans la libération de dispositifs par voie sèche (MEMS, couches actives pour transfert sur flexible…). En effet, la gravure chimique sèche offre une alternative intéressante aux gravures par voie humide puisqu’elle permet d’éviter les effets de stiction, tout en conservant une haute sélectivité et en limitant fortement la corrosion de nombreux métaux. Cette technique est également complémentaire de la gravure plasma parce qu’elle propose une gravure isotrope, une meilleure sélectivité entre les matériaux et qu’elle évite l’endommagement des surfaces avec des vitesses de gravure plus lentes et une absence de bombardement ionique. Actuellement, nous pouvons graver par cette technique 2 matériaux de la filière Si : le Si par XeF2, en utilisant un Bâti Xactix X4, et le SiO2 par HF en phase vapeur, grâce à un Bâti SPTS µEtch (Primaxx).

Deposits of organic thin films under vacuum are also proposed (parylene, pentacene,...).

  • transfer of active layers on flexible material

Transistor of the GaN die transferred on flexible after thinning of the substrate and 20µm XeF2 etching of the remaining Si layer (Carbon team)

  • Si etching using vapor-phase XeF2 etch cycles exhibiting high selectivity over thermal oxide and resin.

Release by 10µm deep XeF2 etching of a thermoelectric characterization platform on 60nm Si membrane protected by BOX. The oxide is then etched by HF in vapor phase (MicroelecSi team)

  • SiO2 etching, performing vapor phase HF etch cycles offering high selectivity to Si and very good compatibility with many materials such as SiC, Al, Pt, Au, Ni, Cr, TiW, and Al2O3.

Sub etching of a 2µm BOX by HF in vapor phase (Nam6 team)

Contact: Jean Houpin, Dmitri Yarekha

  • CMNF - Micro and Nano Fabrication Center
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