Three molecular beam epitaxy (MBE) racks allow the growth of thin films of semiconductors, complex heterostructures and nanostructures with dopants in ultra-high vacuum environment. Two racks are dedicated to arsenic, phosphorus and antimony III/V materials. They are connected to each other and to the ultra-high vacuum XPS analysis chamber. The third rack is used for graphene and h-BN growth.

In addition to these growth tools, various material characterization tools, including some in-situ, are available (structural, optical, electrical properties). More information on these tools can be found in the section caractérisation.

More information about these activities is available on the EPIPHY group (Contact: Xavier Wallart, Group Manager

Expertise and know-how: some highlights

2D heterostructures for optoelectronics and electronics

Realization of antimony-based heterostructures for bipolar and field effect transistors in the context of mesoscopic physics studies.

Growth of phosphorus materials for optoelectronics

Growth of short-lived materials, including low-temperature GaAs, with excellent reproducibility control

Nanostructures and selective growth

Selective epitaxy on substrates covered with etched dielectric masks

III/V semiconductor nanostructures combining arsenides, phosphides and antimonides

Graphène

Graphene growth under ultra-high vacuum, by graphitization of SiC or molecular jet epitaxy (solid carbon source).

UHV analysis coupled with growth frame (LEED/Auger by Omicron).