The use of chemical deposition techniques offers a wide range of film thicknesses and properties. We use Plasma-enhanced chemical vapour deposition (PECVD) and low pressure chemical vapor deposition (LPCVD) for insulators, polysilicon deposition or nanowires growth. Atomic layer deposition (ALD) is used for high quality conformal metals and dielectrics deposition in a very controllable way. Conformal parylene polymer deposition by pyrolysis and graphene growth by CVD are also performed.
Expertises and know-how: some highlights
Atomic Layer Deposition enables a wide range of conformal metals deposition and more than 12 types of dielectrics deposition including high-k. Our two systems (TFS200 Beneq, Picosun) equipped with connected glove box enable more than 800 depositions a year on wafers up to 8 inch. Thermal or plasma enhanced reactions are available. Thicknesses range from a few nm to several hundreds of nm in some cases.
Cross-section of Si micropillars with Al2O3 and Pt ALD depositions, and MnO2 electrolytic deposition (groupe CSAM in collaboration with TBrousse, IMN, RS2E). [ref]
Atmospheric Pressure and Low Pressure Chemical Vapor Deposition (5 process tubes Tempress) are used for high purity thin films at temperatures up to 1100°C on substrates from 2” to 4”. They enable dry or wet thermal silicon oxides (2 nm-1.5µm), intrinsic or phosphorus doped polysilicon layers up to 2µm, low temperature intrinsic or doped oxides up to 5µm, low stress or stoichiometric silicon nitrides up to 1 µm. Layers can be used as insulation, passivation, smoothing of sidewalls, p-n junctions,…
STEM images of a Pt/TiO2 conformal deposition by ALD on a Si microtube (groupe CSAM in collaboration with TBrousse, IMN, RS2E). [ref]
Plasma enhanced Chemical Vapor deposition PECVD (Oxford Plasmalab80+) is used to deposit silicon nitride, silicon dioxide and silicon oxinitride with film thickness from a few nm to 2µm. Film stress can be controlled by high/low frequency mixing techniques. Deposition can be performed at temperatures from 80°C to 340°C.
MEMs in PECVD strained silicon nitride (Groupe Nam6)
Other expertises and know-how
- Graphene growth: monolayer coverage, multilayers, transfer on a wide range of surfaces and devices including flexible substrates
- Deposition of organic thin films
- An other LPCVD furnace (MPA Industries) operating until 1400°C is dedicated to Si and Ge nanowire growth promoted by a metal catalyst (typically Au).
- Plasma surface treatments of GaAs to enhance the interface quality in Al2O3 deposition by ALD
Contacts: Guillaume Cochez, Bertrand Grimbert (responsable de la ressource), David Guerin, Ali Abboud