Entries by editor

Des puces tout en souplesse

Article published in issue 13 of the magazine J'innove en Nord-Pas de Calais With Equipex accreditation, the LEAF project brings together the IEMN in Villeneuve d'Ascq and the LAAS in Toulouse to make electronic chips both flexible and high-performance, with a vast potential range of applications. To ensure that tomorrow's mobile phone [...]

The gold mine of the pencil

Article published in issue 13 of the magazine J'innove en Nord-Pas de Calais With a budget of €1 billion over ten years, the European Graphene project has the potential to revolutionise innovation in a wide range of fields, by exploiting the potential of the nanomaterial whose name it bears. 1 billion over ten years: the figure is [...]

Nanothermodynamics improves surface energy measurements

Article published in nanotechweb on 7 December 2012 Researchers in Belgium and France have determined a new value for the surface energy of solid selenium and have found it to be considerably higher than previously thought. Selenium is a key element in nanotechnology and the new result will be important for a variety of applications [...]

IEMN is recruiting

A lecturer/researcher - EMC and telecommunications and a lecturer/researcher - high-performance electronics using 2D materials

Job opportunities

One Teacher/Researcher - EMC and telecommunications and one Teacher/Researcher - High-performance electronics using 2D materials -> More details...

ExCELSiOR Seminar Cycle - Nano-FTIR: Infrared spectroscopic chemical identification of materials at nanoscale

 - The NeaSNOM Microscope" - "Nano-FTIR: Infrared spectroscopic chemical identification of materials at nanoscale" by Dr. Andreas HUBER from Neaspec GmbH F. Huth1,2, A. Govyadinov2, S. Amarie1, W. Nuansing2, A.J. Huber1, F. Keilmann3, and R. Hillenbrand2,4. 1 Neaspec GmbH, Martinsried, Germany; 2 CIC Nanogune Consolider, Donostia-San Sebastian, Spain; 3 Dept. of Physics and CeNS, Ludwigs-Maximilians-Universität, [...]

Transistors take on the third dimension

For the first time, researchers at LAAS and IEMN have built a truly 3D nanometric transistor. The miniaturisation limits for electronic components may be further away than previously thought. A team from the Systems Analysis and Architecture Laboratory (LAAS-CNRS, Toulouse) and the Electronics, Microelectronics and Nanotechnology Institute (CNRS/University of Toulouse) have [...]

Projet Equipex LEAF

Equipex LEAF project: 'Laser procEssing plAtform for multiFunctional electronics on Flex' Kick-off Meeting Wednesday 20 March 2013 IEMN, Avenue Poincaré, Villeneuve d'Ascq, France Morning session open to the public (registration required) AGENDA 9:30 Welcome (IEMN Hall) 10:00 - 10:30 Presentation of the EQUIPEX LEAF project 10:30 - 11:10 Daniel BENSAHEL ( Manager advanced front-end materials) ST Microelectronics, Crolles [...]

JOURNEE DE PRESENTATION DU RESEAU RTB

29/03/2013 - from 10am to 4pm The Technological Research Base network (RTB) is a national network of major micro- and nanofabrication centres. This network is available to all academic and industrial communities interested in micro and nanotechnologies and invites you to a day of information and exchange on the possibilities [...]

La première démonstration de la fabrication de transistors de puissance en onde millimétrique de type HEMT AlGaN/GaN sur substrat silicium (110)

The first demonstration of the fabrication of millimetre-wave power transistors of the HEMT AlGaN/GaN type on highly resistive silicon (110) substrate was carried out at the IEMN in collaboration with the CRHEA [A. SOLTANI et al, IEEE Electron Device Letters, published online on 7March 2013]. Typically, these heterostructures are obtained by epitaxy [...].