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IEMN is recruiting

A lecturer/researcher - EMC and telecommunications and a lecturer/researcher - high-performance electronics using 2D materials

Job opportunities

One Teacher/Researcher - EMC and telecommunications and one Teacher/Researcher - High-performance electronics using 2D materials -> More details...

ExCELSiOR Seminar Cycle - Nano-FTIR: Infrared spectroscopic chemical identification of materials at nanoscale

 - The NeaSNOM Microscope" - "Nano-FTIR: Infrared spectroscopic chemical identification of materials at nanoscale" by Dr. Andreas HUBER from Neaspec GmbH F. Huth1,2, A. Govyadinov2, S. Amarie1, W. Nuansing2, A.J. Huber1, F. Keilmann3, and R. Hillenbrand2,4. 1 Neaspec GmbH, Martinsried, Germany; 2 CIC Nanogune Consolider, Donostia-San Sebastian, Spain; 3 Dept. of Physics and CeNS, Ludwigs-Maximilians-Universität, [...]

Transistors take on the third dimension

For the first time, researchers at LAAS and IEMN have built a truly 3D nanometric transistor. The miniaturisation limits for electronic components may be further away than previously thought. A team from the Systems Analysis and Architecture Laboratory (LAAS-CNRS, Toulouse) and the Electronics, Microelectronics and Nanotechnology Institute (CNRS/University of Toulouse) have [...]

Projet Equipex LEAF

Equipex LEAF project: 'Laser procEssing plAtform for multiFunctional electronics on Flex' Kick-off Meeting Wednesday 20 March 2013 IEMN, Avenue Poincaré, Villeneuve d'Ascq, France Morning session open to the public (registration required) AGENDA 9:30 Welcome (IEMN Hall) 10:00 - 10:30 Presentation of the EQUIPEX LEAF project 10:30 - 11:10 Daniel BENSAHEL ( Manager advanced front-end materials) ST Microelectronics, Crolles [...]

JOURNEE DE PRESENTATION DU RESEAU RTB

29/03/2013 - from 10am to 4pm The Technological Research Base network (RTB) is a national network of major micro- and nanofabrication centres. This network is available to all academic and industrial communities interested in micro and nanotechnologies and invites you to a day of information and exchange on the possibilities [...]

La première démonstration de la fabrication de transistors de puissance en onde millimétrique de type HEMT AlGaN/GaN sur substrat silicium (110)

The first demonstration of the fabrication of millimetre-wave power transistors of the HEMT AlGaN/GaN type on highly resistive silicon (110) substrate was carried out at the IEMN in collaboration with the CRHEA [A. SOLTANI et al, IEEE Electron Device Letters, published online on 7March 2013]. Typically, these heterostructures are obtained by epitaxy [...].

L’IEMN a fêté ses 20 ans

On behalf of all past and present staff at the IEMN, congratulations to the organisers on the success of our laboratory's 20th anniversary. Gilles Dambrine and Lionel Buchaillot