La première démonstration de la fabrication de transistors de puissance en onde millimétrique de type HEMT AlGaN/GaN sur substrat silicium (110)
The first demonstration of the fabrication of millimetre-wave power transistors of the HEMT AlGaN/GaN type on highly resistive silicon (110) substrate was carried out at the IEMN in collaboration with the CRHEA [A. SOLTANI et al, IEEE Electron Device Letters, published online on 7March 2013]. Typically, these heterostructures are obtained by epitaxy [...].
