Journée Dispositifs Térahertz : simulations, réalisations et applications

le vendredi 24 mars 2017 au Laboratoire Central de l’IEMN, Villeneuve d’Ascq

THZ Near-Field Microscopy (Equipex ExCELSior)

La thématique « térahertz » est pour nombre d’entre nous au cœur de nos activités. Cependant, ce mot-clef recouvre des thèmes très variés relevant parfois de cultures différentes (Pour ne citer qu’un exemple emblématique, ce domaine peut être approché aussi bien avec les outils de l’électronique que de la photonique).

Les lasers à cascade quantique ont permis des succès remarquables pour couvrir le gap térahertz. Cependant, la réalisation de sources compactes et puissantes fonctionnant à température ambiante reste un challenge et les sources électroniques constituent une alternative sérieuse.
Aussi, pour faire un tour d’horizon de l’actualité de cette thématique au sein du laboratoire et plus largement dans la communauté, un journée thématique sur les différentes activités de simulation, mais aussi sur les travaux expérimentaux et technologiques est organisée . Outre les sources et détecteurs, les dispositifs et applications les plus variées seront envisagés.
Programme de la journée :
  • 8h45. Accueil. Introduction
  • 9h00. Abdelouahab Hamadou (LESIMS, Sétif ) « Modélisation des dispositifs à base de lasers à cascade quantique pour l’émission térahertz à température ambiante »
  • 9h55. Christophe Palermo (IES, Montpellier) « Modélisation et simulation numérique des composants électroniques pour le térahertz, sources et détecteurs »
  • 10h50. Pause
  • 11h05. Alain Maestrini (LERMA, Observatoire de Paris) : « Electronique THz pour l’observation de l’Univers à très haute résolution spectrale – missions actuelles et perspectives»
  • 12h00. Pause
  • 13h20. Emilien Peytavit (IEMN) « Génération et Détection d’ondes THz par voie Optoélectronique: Potentiel et limites »
  • 14h00. Guillaume Ducournau et Mohamed Zaknoune (IEMN) « Composants et Télécoms sans fils THz »
  • 14h40.  S. Venkatachalam, G. Ducournau, J.-F. Lampin, D. Hourlier (IEMN) « Blackglass materials for THz applications»
  • 15h00. Pause
  • 15h15. Christophe Dalle (IEMN) « Modélisation d’oscillateur THz à diode Gunn GaN distribuée »
  • 15h35. Tahsin Akalin (IEMN) « Mesures sous pointes jusqu’à 750GHz de lignes de Goubau planaires et résultats expérimentaux sur les métasurfaces et les antennes Terahertz »
  • 15h55. Ludovic Burgnies, Eric Lheurette (IEMN) « Textiles métamatériaux pour les spectres millimétrique et térahertz »
  • 16h15. Nicolas Fernez (IEMN) « Métasurfaces absorbantes désordonnées à 200 GHz » 16h35 Tomas Horak, Oleksandr Stepanenko : « Effets non-réciproques aux fréquences THz»
  • 16h55. Clôture

Pour tout renseignement complémentaire :
Jean-Luc.Thobel@iemn.univ-lille1.fr

SON ET LUMIÈRE 2017, Combiner son et lumière à l’échelle des nanos

du 17 avril au 28 avril 2017 aux Houches

Durant presque 2 semaines se retrouveront jeunes chercheurs et experts issus de différents domaines qu’il s’agisse d’acoustique, d’optique, d’opto-mécanique, de nanothermique. Tous ont en commun de s’intéresser aux phénomènes physiques mêlant phonon et photon à l’échelle nanométrique.
Cette école internationale s’adresse aux jeunes chercheurs, ingénieurs, doctorants et post-doctorants. C’est une formation doctorale. Elle est également soutenue par le CNRS au titre de la formation continue.

Le programme de l’école est construit pour d’abord offrir un savoir de base dispensé par les plus grands noms du domaine : H.J. Maris, B. Perrin, D.G. Cahill, G. Fytas, C.K. Sun, E. Weig, etc… L’accent est également mis sur les applications les plus récentes en lien avec ces sujets, domaines de recherche émergents et applications industrielles des techniques expérimentales.

Comité scientifique :

  • Natalia Del Fatti, Université Lyon 1, France
  • Barham Djafari-Rouhani, Université de Lille, France
  • Alexandro Fainstein, Centro Atomicho Bariloche, Argentina
  • Vitaly Gusev, Université du Maine, France
  • Antony Kent, University of Nottingham, United Kingdom
  • Humphrey Maris, Brown University, USA
  • Adnen Mlayah, CNRS- Université Paul Sabatier, Toulouse, France
  • Bernard Perrin, INSP Univ Pierre et Marie Curie, France
  • Pascal Ruello, Université du Maine, France
  • Alexey Sherbakov, Ioffe Institute, St.Petersbourg, Russie
  • Clivia Sotomayor-Torres, Université de Barcelone, Espagne
  • Chi Khuang. Sun, National Taiwan University, Taipei, Taiwan
  • Eva Weig, Konstanz University, Allemagne
  • Oliver Wright, University of Sapporo, Japon
  • Arnaud Devos, IEMN, Lille, France

Comité d’organisation :

  • A. Devos, Institut d’Electronique, de Microelectronique et de Nanotechnologie, Lille, France
  • C. Rossignol, Institut de Mecanique et d’Ingenierie, Bordeaux, France
  • P.-A. Mante, Lund University, Lund, Sweden
  • S. Bossut, Institut d’Electronique, de Microelectronique et de Nanotechnologie, Lille, France

Public(s) ciblé(s) :

  • Prioritairement : Les doctorants et post-doctorants, des jeunes chercheurs et des ingénieurs, débutant dans des activités de recherche en relation avec l’une des thématiques de l’école. Notons que de nombreuses équipes de recherche travaillent en France dans le domaine de l’acoustique picoseconde, la nanothermique, l’optomécanique. Cette activité est également très forte dans d’autres pays européens dont l’Allemagne.

Les dispositifs pour la santé développés au CEA-LETI

Friday 3 March 2017 at 3.30pm, in the LCI amphitheatre.

As part of the MNMB department seminars, Nicolas Verplanck, project manager at CEA-LETI, will be presenting the healthcare devices developed at CEA-LETI.

*The seminar will be in French.

Les ondes térahertz au secours de l’Internet sans fil

Despite the expansion of the 4G network, wireless Internet still needs a great deal of innovation if it is to achieve the same speeds as fibre optics. An international team, based at the Institute of Electronics, Microelectronics and Nanotechnology, has shown that waves in the terahertz frequency range could take over from wired networks. This work is published in Nature Photonics.

IEMN (A. Duchêne) - Visual illustration of the main component, i.e. the component that makes it possible to "switch" from the world of optical fibres (bottom left) to the world of terahertz (the spiral) for telecoms (small shapes top right).

In 2018, the Internet will account for more than 130 billion billion bytes of data exchanged per month. Since most of this growth is expected on wireless channels, ultra high-speed transport infrastructures will have to evolve considerably. This requires faster components, because the increase in throughput will only be absorbed if the frequency of the waves rises towards the beginning of the THz band (between 220 and 350 GHz). Researchers at the Institute of Electronics, Microelectronics and Nanotechnology (IEMNCNRS/Université Lille-1/ISEN Lille/Université de Valenciennes et du Hainaut-Cambrésis/École Centrale de Lille) were able to set up an initial demonstrator, based on optoelectronic devices that transform optical fibre signals into radio signals.

These demonstrations use optoelectronic components that perform 'photomixing'. In this process, two lasers are sent to the same photodiode, which transforms them into a signal corresponding to the difference in their wavelengths. This converts optical signals of the order of a hundred THz, typical of optical fibres, into a radio signal of around 300 GHz. At the IEMN, a wireless data rate of 32 Gbit/s was transmitted over several tens of metres using a frequency of around 400 GHz. These frequencies offer a very good compromise between the capacity of the components and the attenuation of the waves in the air, which will eventually make it possible to achieve the range required for urban use. This step will enable us to move towards the next challenges: transfer speeds in excess of 100 Gbit/s and transmissions over more than a kilometre.

The technology associated with this work has been developed thanks to the network of major technology centres. RENATECH network.with the help of laboratories PhLAM and IRCICA and support from the ANR COM'TONIQ programme, the Equipex FLUX, Excelsior and the CPER Photonics for society.

References :

Advances in terahertz communications accelerated by photonics,
T. Nagatsuma, G. Ducournau and C.C. Renaud
Nature Photonics - 10, 371-379 (2016)
DOI: 10.1038/NPHOTON.2016.65

Contacts chercheurs :
Guillaume Ducournau – IEMN
Contact communication INSIS :
insis.communication@cnrs.fr

Productions, activités et usages des « Nanos » : Les conditions de la confiance

Friday 10 March, the Lilliad Learning Center Innovation de Villeneuve d'Ascq (located on the Cité Scientifique campus in Villeneuve-d'Ascq within the European Metropolis of Lille) will host the NanoLille day.

This discussion day is aimed at all those involved in nanotechnologies or interested in their development and their social and economic implications. Its aim is to provide a particularly well-informed overview of the knowledge available and the gaps in each of the fields concerned by the development of nanomaterials and nanotechnologies, and to promote a collective debate on the prerequisites for the sustainable and responsible development of these new technologies.

Programme, prices and registration : http://www.nanoresp.fr/evenements/nano-lille/

Contact: forum@nanoresp.fr

The organisers

The NanoRESP Forum (www.nanoresp.fr) is a multi-stakeholder dialogue (industry, academia, associations, public authorities) on nanotechnologies initiated in 2013. Supported by a public-private alliance, it aims to develop cooperative vigilance in relation to controversies and to identify responsible practices in a climate of uncertainty.

The Nanoscoope project (http://nanoscoope.iemn.univ-lille1.fr/) is a researcher-citizen project funded by the Hauts-de-France Region. Since 2013, it has been organising multi-stakeholder, cross-disciplinary consultation workshops on the various issues surrounding the development of nanotechnologies. Nanoscoope has joined forces with other partners to organise this event on 10 March, which marks the end of the project in this form.

The National metrology and testing laboratory (LNE, http://www.lne.fr/), a public industrial and commercial establishment (EPIC), is the national reference laboratory for industry in the field of measurement (metrology). It is attached to the Ministry of Industry.

The Directorate-General for Enterprise (DGE) of the French Ministry for the Economy, Industry and the Digital Economy (http://www.entreprises.gouv.fr/)'s mission is to develop the competitiveness and growth of companies in industry and services, in particular by supporting and disseminating innovation with a view to sustainable growth and employment.

Séminaire : Nanostructuration at two scales in III V semiconductors to control both electronic states and photonic states: photonic crystal quantum cascade laser

04 april At 11h00 – Amphiteather IEMN-LCI Villeneuve d’Ascq
Dr. Romain Peretti, IEMN

On one hand, periodically repeated change of refractive index at the wavelength scale known as photonic crystal (PhC) affects the motion of photons in much the same way that ionic lattices affect electrons in solids. This means photons now can be depicted by Bloch modes and the well know band diagram to describe their motion in the material. Such PhC when unidimensional can be used for instance as antireflective coating when the 2 dimensional counterpart is used in solar cells or micro laser.

 

On the other hand, periodically repeated stack of semiconductor multiple quantum well heterostructures allows achieving intersuband transition in III-V semiconductors. This idea was first proposed in R.F. Kazarinov and R.A. Suris in 1971 with in mind the idea of creating a new kind of laser. Such quantum cascade laser (QCL) where then demonstrated by Faist et al. in 1994. QCLs are unipolar and laser emission coming from this intersuband transition. Since then, QCL’s made huge progresses and are now reaching more than one watt of power in the mid infrared range of the spectrum (3- 12µm), at room temperature. Still these high power lasers are multimode and all the designs aiming at single mode operation suffer from additional modes apparition when scaling up the device to reach high power. However, several applications such as military countermeasure, or laser surgeries needs high power single mode operation. Pulled by this demand, we combined QCL and PhC adopting an innovative regrowth approach to enhance even more the thermal dissipation needed by the device.

Séminaire : Nanostructured GaN devices for power applications and beyond – Pr. Elison Matioli

Dans le cadre du thème GaN, l’IEMN accueille :

Lundi 27 Mars 2017 – IEMN LCI Villeneuve d’Ascq, Salle du conseil – 10:30
Nanostructured GaN devices for power applications and beyond
Elison Matioli, Ecole Polytechnique Fédérale de Lausanne (EPFL)

In this talk, I will present some of the nanowire-based technologies developed in our group to significantly enhance the performance of high-voltage GaN power devices, such as Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs). This presentation will cover high-performance AlGaN/GaN HEMTs on silicon substrate based on nanowire tri-gate architectures. The optimized tri-gate geometry led to reduced off-state leakage current (Ioff) and sub-threshold slope (SS), increased on/off ratio, and improved breakdown voltage (Vbr) of the device. With a gate-to-drain separation (LGD) of 15 μm, hard Vbr up to 1755 V at Ioff of 45 μA/mm with high soft Vbr of 1370 V at Ioff = 1 μA/mm were achieved, rendering an excellent high-power figure of merit (FOM) up to 1.25 GW/cm2.

These nanowire-based technologies were also applied for AlGaN/GaN SBDs on silicon substrates. An optimized hybrid of tri-anode and tri-gate architectures led to SBDs exhibiting high Vbr, low reverse leakage current (IR), and small turn-on voltage (VON) of 0.76 ± 0.05 V since the tri-anode architecture formed a direct Schottky contact to the 2D electron gas (2DEG). The reverse characteristics were controlled electrostatically by an embedded tri-gate transistor, instead of relying only on the Schottky barrier, which resulted in low IR below 10 nA/mm at large reverse biases up to 500 V. In addition, these devices exhibited record Vbr up to 1325 V at IR of 1 μA/mm, rendering an excellent high-power FOM of 939 MW/cm2. These results unveil the significant potential of nanostructured GaN transistors for future power applications.

Finally, I will discuss the application of these nanostructures to better understand the electron transport in GaN-based heterostructures, which was exploited to demonstrate new ballistic devices operating at room temperature. The fast transport of ballistic electrons could offer a pathway for future room-temperature high-frequency ballistic devices.

Biography: Elison Matioli is an assistant professor in the institute of electrical engineering at Ecole Polytechnique Fédérale de Lausanne (EPFL). He received a B.Sc. degree in applied physics and applied mathematics from Ecole Polytechnique (Palaiseau, France) in 2006 and a Ph.D. degree from the Materials Department at the University of California, Santa Barbara (UCSB) in 2010. He was a post-doctoral fellow in the Department of Electrical Engineering and Computer Science at the Massachusetts Institute of Technology (MIT) until 2014. His expertise is in semiconductor and nanostructure growth by metal-organic chemical vapor deposition (MOCVD), device fabrication and development of advanced numerical models to simulate device properties. He has received the Outstanding Graduate Student – Scientific Achievement Award for his Ph.D. thesis, the IEEE Electron Devices Society George Smith Award for his demonstration of high-efficiency nanostructured power electronic devices and the ERC Starting Grant in 2015.

 

The 2017 thesis topic offers are online ...

The doctorate: a passport to the future

  • The doctorate provides an opportunity to deepen the research methods acquired during the first cycles of higher education, but also to take a different look at these methods and possibly to cooperate in improving them.
  • A doctorate is a diploma required for entry to almost all national and international research bodies.
  • In France, a doctorate is required to enter the competitive examination for Maître de Conférences and then Professeur des Universités.
  • The doctorate is also the gateway to the most senior positions in most national/international research establishments, whether public or private.

View the 2017 subjects (PDF)

 

Séminaire : ‘Optical Frequency Combs for Ultra-Low Phase-Noise Microwave Signal Generation and Laser Activities at LP2N ‘

Speaker : Giorgio Santarelli (LP2N-Bordeaux)
Date : 31 January at 11h00
Location :  Amphiteather IEMN-LCI

Low-phase-noise and frequency stable microwave signals are crucial for a wide variety of scientific and technological applications including atomic frequency standards, phased-array radars, arbitrary waveform generation, photonic processing and very long baseline interferometry. One challenging aim for researchers has been the development of a single device that exhibits the ultimate performance in multiple aspects of signal purity for instance to have low phase fluctuations across the spectrum from low Fourier frequencies (1Hz) out to the highest (1MHz) frequencies of interest. One promising route is the low-noise optical frequency division of a laser that has been stabilized to a mode of a vibration-insensitive reference cavity. In these circumstances the divided signal carries the frequency stability of the original signal while delivering an improved signal-to-noise ratio by the division of the phase fluctuations. The photonic shot noise in optical to electrical pulse conversion in a photodiode which was believed to impair the ultra-low phase noise generation has been greatly improved by combining pulse interleavers for increased effective repetition rates and apparent sub-shot-noise photodetection ([1]). With this last technique, it was shown that the shot-noise limit is greatly improved over that of cw lasers in the short (<1ps) optical pulses limit. There have been several developments in the field of photonic microwave synthesis showing very low absolute or residual phase noise using femtosecond frequency combs based on either modelocked Ti:Sapphire and Erbium fiber lasers [2,3]. Fibre systems are morecompact, robust and power efficient than Ti:Sapphire, very recently we have demonstrated the lowest phase noise by of -106(<-173) dBc/Hz@1Hz(10kHz) offset carrier. I will present a review the recent advances in this domain and the latest results [4]. In addition, I will shortly present laser developments at LP2N [5].

[1]F. Quinlan et al. “Exploiting shot noise correlations in the photodetection of ultrashort optical pulse trains”, Nature Photonics, 7, p. 290 (2013). [2]T. M. Fortier, F. Quinlan, A. Hati, C. Nelson, J. A. Taylor, Y. Fu, J. Campbell, and S. A. Diddams, « Photonic microwave generation with high-power photodiodes, » Opt. Lett. 38, 1712-1714 (2013) [3]F. Quinlan, F. N. Baynes, T. M. Fortier, Q. Zhou, A. Cross, J. C. Campbell, and S. A. Diddams, « Optical amplification and pulse interleaving for low-noise photonic microwave generation, » Opt. Lett. 39, 1581-1584 (2014). [4]X.Xieet al., G. Santarelli, and Y. Le Coq, « ) Photonic microwave signals with zeptosecond-level absolute timing noise » Nat. Phot.(2016). [5]G. Guiraud, N. Traynor, G. Santarelli, « High-power and low-intensity noise laser at 1064nm, » Opt. Lett. 41, 4040-4043

Séminaire : Artificial Neuron performance: is it possible to outperform biology?

Speaker: Alain Cappy (IEMN)
Date : 17 January at 11h00
Location :  Amphiteather IEMN-LCI

Abstract: 

Traditional computing technology based on the Von Neumann architecture is facing fundamental limits in the context of the end of Moore's law. Among them is a poor energy efficiency. This situation motivates the use of different processing information paradigms, such as the use of spiking neural networks (SNNs), which also introduce cognitive characteristics. In this context, this talk presents the design of an original artificial neuron (AN) in standard 65nm CMOS technology, optimized for energy efficiency. The main features of the fabricated ANs are: (i) an energy efficiency of few fJ/spike, that is, between 2 to 3 orders of magnitude lower than the current state-of-the-art, (ii) a standby power, obtained when the neuron remains at rest, not exceeding 10s of pW (iii) a silicon consumption area between 35 and 200 µm2(iv) a spiking frequency able to reach 10s of kHz, a useful feature within a biocomputing context. The performance level, achieved in standard 65 nm CMOS technology, can address various contexts such as highly integrated neuro-processors for robotics, neuroscience or medical applications.