A magnetoelectric random access memory cell based on the stress-mediated magnetoelectric effect that promises extremely low bit-reading and low bit-writing energies.
From the Journal: Applied Physics Letters By AIP News Staff WASHINGTON, D.C., May 30, 2017 — Today’s computers provide storage of tremendous quantities of information with extremely large data densities, but writing and retrieving this information expends a lot of energy. More than 99 percent of the consumed power of information storage and processing is […]





