A successful combination of III-V nanowires and II-VI nanocrystals for mid-infrared photodetection
A collaboration between the IEMN, the Institut des Nanosciences de Paris, the ESPCI and the ONERA has made it possible to reconcile the advantages of two competing technologies for the production of broadband photodetectors in the mid-infrared range. By decorating InGaAs nanowires, epitaxial in a planar array by selective growth, with chemically produced HgSe and HgTe nanocrystals, the possibilities offered by the semiconductor in terms of transport and doping properties were combined with the spectral range of detection offered by the nanocrystals. The photodiodes produced in this way have a detection range extending to the mid-infrared, while preserving their signal-to-noise ratio up to 200K.
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