A collaboration between IEMN, Institut des Nanosciences de Paris, ESPCI and ONERA has reconciled the advantages of two competing technologies for the production of broadband mid-infrared photodetectors. By decorating InGaAs nanowires, organized in planar network by selective area epitaxy, with chemically-produced HgSe and HgTe nanocrystals, the possibilities offered by the semiconductor in terms of transport and doping properties were combined with the spectral range of detection offered by the nanocrystals. The resulting photodiodes exhibit a detection range down to the mid-infrared, while preserving their signal-to-noise ratio up to 200K.

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https://doi.org/10.1063/5.0141328