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NEWS

THESE BREZZA E. « Développement et Evaluation d’une Nouvelle Architecture de Transistor Bipolaire à Hétérojonction Si/SiGe pour Technologie BiCMOS 55nm haute-performance et faible-coût « 

E. BREZZA

Soutenance : 16 Décembre 2022
PhD thesis in Electronics, Microelectronics, Nanoelectronics and Microwaves, University of Lille, ENGSYS Engineering and Systems Sciences, 16 December 2022
Projet associé : Laboratoire commun STMicroelectronics-IEMN

Summary:

Le développement de la technologie BiCMOS055X de STMicroelectronics, une technologie BiCMOS basé sur un noeud CMOS 55 nm compatible avec une ligne de production 300 mm, requiert le développement d’une nouvelle architecture de Transistor Bipolaire à Hétérojonction (TBH). L’architecture Epitaxial eXtrinsic Base Isolated from the Collector (EXBIC) a été choisie en visant des valeurs de fT = 400 GHz et fMAX = 500 GHz avec une tension de claquage émetteur-collecteur BVCEo >= 1.35 V pour cette technologie. Après la réalisation d’un premier dispositif fonctionnel, un plan d’amélioration est défini. Les différents aspects de la fabrication sont considérés afin de réduire la complexité du dispositif et améliorer sa robustesse. La performance électrique est améliorée à chaque introduction d’une nouvelle modification. Des nouvelles intégrations de collecteur et base extrinsèque sont proposées, ainsi définissant une nouvelle version de TBH EXBIC. Sur l’architecture EXBIC améliorée, un procédé d’optimisation a été mené afin de régler les paramètres de chaque partie du composant. Les études ciblent l’amélioration des profils de dopage et la réduction des résistances parasites. Les valeurs de fT = 380 GHz et fMAX 390 GHz avec BVCEo = 1.4 V atteintes sur le meilleur dispositif produit sont encore insuffisantes pour les exigences de la technologie BiCMOS055X. Des études futures sont définies afin de pouvoir atteindre et dépasser les performances souhaitées.

Abstract:

The development of STMicroelectronics’ BiCMOS055X technology, a BiCMOS technology based on a 55 nm CMOS node compatible with a 300 mm production line, requires the development of a new Bipolar Heterojunction Transistor (BHT) architecture. The Epitaxial eXtrinsic Base Isolated from the Collector (EXBIC) architecture has been chosen by targeting values of fT = 400 GHz and fMAX = 500 GHz with an emitter-collector breakdown voltage BVCEo >= 1.35 V for this technology. After the realization of a first functional device, an improvement plan is defined. The different aspects of the fabrication are considered in order to reduce the complexity of the device and improve its robustness. The electrical performance is improved with each new modification. New integrations of collector and extrinsic base are proposed, defining a new version of TBH EXBIC. On the improved EXBIC architecture, an optimization process has been carried out to adjust the parameters of each part of the component. The studies target the improvement of doping profiles and the reduction of parasitic resistances. The values of fT = 380 GHz and fMAX 390 GHz with BVCEo = 1.4 V reached on the best device produced are still insufficient for the requirements of the BiCMOS055X technology. Future studies are defined in order to reach and exceed the desired performances.

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