The various steps of the technological process will be developed and optimized, in particular :

• The fabrication of low-resistance ohmic contacts using alloyed or non-alloyed ohmic contact technology.
• Devices isolation using implantation or etching.
• Optimization of the technolgical step to obtain short gates under 100 nm.
• Passivation of components by PECVD or ALD. 

The transistors will then be characterized with:

• DC measurements of I-V characteristics to extract the usual transistor operating parameters such as maximum current density, pinch-off voltage, tansconductance, etc. These measurements will be helpful to obtain feedback for material growth at CRHEA, and for optimisation of the technological process at IEMN.
• Pulsed measurements to quantify gate and drain lag phenomena.
• Microwave measurements, such as S-parameter measurements to determine the RF performance of transistors.

He should have good experience of cleanroom devices technology, and have successfully completed the various technological steps inherent in the fabrication of semiconductor devices. Skills in electrical characterization techniques will also be appreciated.

The candidate will work within the framework of the GaNEXT project of excellence.

Most of the work will be carried out in clean room, but will also include measurements of the devices produced.

The candidate will receive specific training in cleanroom safety and will be introduced to specific technological techniques for using the various resources available.