IEMN is a major player in the design and development of optoelectronic THz sources. The "THz Photonics" team of the IEMN - which proposes this contract - has recently demonstrated the generation of THz waves by optoelectronic means with unequalled output power and efficiency. This source is based on the photodetection of a beat of two laser beams and requires the development of very high bandwidth semiconductor photodetectors.

Within the framework of the Photowathz project financed by the Hauts de France region, the Photonique THz team aims to go even further in terms of power, spectral purity and tunability. To do this, new generation photodetectors, with distributed architecture[1] optimized to operate with lasers of wavelength 1060nm will be designed, manufactured and characterized. The stakes of this project are high, since it will demonstrate the feasibility of a THz source without equivalent today.

The Engineer will be responsible for the design and manufacture of photomixers. To do so, he will:

• Design the photomixer using RF and photonic simulation software (CST, Lumerical, etc)
• To make the CAD of the lithography masks.
• Carry out the steps in a clean room environment (resin coating, electronic/optical lithography, metallization, PVD deposits, plasma etching).
• Characterize the samples during the manufacturing process (AFM, profilometer, optical and electronic microscopy, electrical characterization).

To carry out this mission, the engineer recruited will rely on the technological expertise of the team and all the personnel of the clean room.

[1] F. Bavedila et al., “Development of a millimeter-long Travelling wave THz photomixer,” J. Light. Technol., vol. 39, no. 14, pp. 4700–4709, 2021, doi: 10.1109/JLT.2021.3078226.

He/she must have a good experience in cleanroom component technology and have successfully completed the various technological steps inherent in the manufacturing of semiconductor devices. A first experience in the fabrication of semiconductor devices (MEMS, diodes, photodetectors, transistors...) in clean room is essential. Experience in the characterization of optoelectronic devices would be a plus.

• Assurer le support technique et scientifique des équipements gravures (DRIE, RIE, ICP)
• Assurer la maintenance de ces équipements.
• Mise au point des procédés de calibration.
• Maitrise des outils de fabrication de composants (lithographie, dépôts, gravure) ainsi que des moyens de caractérisation (Microscopie électronique, ellipsométrie, profilométrie, AFM, …)
• Assurer une veille technologique.

• Connaissance générale en Chimie et Sciences Physiques
• Connaissances en technique de fabrication (Gravure, Lithographie, Dépôts)
• Connaissances générales en instrumentation et en mesures physiques
• Connaissance des techniques du vide (vide primaire, vide secondaire)
• Handling of gases under pressure
• Aptitude au travail en équipe et objectifs multi-projets
• Connaissance générale des règles d’hygiène et de sécurité
• Maitrise de la langue anglaise : expression et compréhension orales et écrites.

L’IEMN est un institut de recherche de 450 personnes. Son activité de recherche pluridisciplinaire couvre un large spectre allant de la physique du matériau jusqu’aux systèmes de télécommunication.

Ses activités de recherche s’appuient essentiellement sur cinq services techniques : la centrale de Micro et Nano Fabrication (CMNF), la plateforme de microscopie champ proche, la centrale de caractérisation électrique HF-MEMS (Micro-Electro-Mechanical-Systems), la plateforme télécom et la plateforme CEM (Compatibilité Electro Magnétique)