Prof. Henri Happy

+33 (0)3 20 19 78 41


Present research activity:

  • Carbon devices for HF applications (CNT FET, Graphene FET, …)
  • Flexible electronics for RF applications
  • HF characterization of nanodevices

Former Research topics:

  • Design and fabrication of Monolithic Microwave Integrated Circuits (MMICs) using III-V materials and Silicon material
  • Modeling of high electron mobility transistors (HEMT) devices using a quasi-2D approach

Short CV:

Happy received the Ph.D. degree in Electrical Engineering from the University of Lille 1, in 1992. In 1988 he joined the Institute of Electronic, Microelectronic and Nanotechnology (IEMN), one of the Lab of University Lille 1, where he is currently Full Professor of Electronics. His primary research interests are in high electron-mobility transistor (HEMT) modeling. From 1998 to 2003, his research areas were involved with the design, fabrication and characterization (up to 220 GHz) of MMICs for optical communications systems. Since 2004, his research area has focused on nanodevices, and particularly carbon devices (carbon nanotube, graphene). These activities concern understanding of fundamental limitations and improvement of high frequency performance of carbon devices, and their applications in emerging fields of RF circuits on flexible substrates. This includes graphene growth either on SiC and metal substrate, fabrication and characterization of graphene FET. He is a leading investigator on the high frequency device research carried out under the European Graphene Flagship program. His experience is recognized by the community: he has presented many invited talks, seminars and tutorials. Henri Happy has authored or co-authored about 100 international publications and communications.