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Equipex LEAF Project

Equipex LEAF Project : 'Laser procEssing plAtform for multiFunctional electronics on Flex' Kick-off Meeting 20th Wednesday of March 2013 IEMN, Avenue Poincaré, Villeneuve d'Ascq, France Open on morning (registration required) AGENDA 9:30 Welcome and Registration (IEMN Hall) 10:00 - 10h30 Presentation EQUIPEX LEAF project 10:30 - 11:10 Daniel BENSAHEL ( Manager advanced front-end materials) ST Microelectronics, Crolles [...]

Kick-off Meeting RTB Network

29/03/2013 - 10:00 (am) to 04:00 (pm) The network to basic research of technology (RTB), is a national network to large platform of micro- and nanofabrication. This network is available to all academic and industrial communities interested in micro and nanotechnologies and invites you to a day of information and exchange on the possibilities of access to [...].

February 6th; 14:30 Council room 'Transport experiments in graphene devices, from exfoliated to epitaxial graphene' by Dr Emiliano Pallecchi; Laboratoire de Photonique et de Nanostructures, Marcoussy Key words: Cooling of hot electrons in graphene; GHz Jonshon noise thermometry; electron-acoustic phonons scattering; supercollisions, experiments on devices based on epitaxial graphene; magneto-transport experiments; ARPES measurements; oxygen adsorption [...]

Postdoc : Nanoscience Characterization Center

ExCELSiOR - Nanoscience Characterization Center Object: 18 months Position of Postdoc Key words: Technology Process, MEMS/NEMS, EM and Mechanical simulations (COMSOL) Context: In the framework of a new large project (EQUIPEX ExCELSiOR-NCC), IEMN will create a new characterization platform for nanosciences gathering a large set of new experimental instruments operating at the interface between nano-microscopy [...].

Transistors take on the third dimension

For the first time, researchers at LAAS and IEMN have built a truly 3D nanometric transistor. The miniaturisation limits for electronic components may be further away than previously thought. A team from the Systems Analysis and Architecture Laboratory (LAAS-CNRS, Toulouse) and the Electronics, Microelectronics and Nanotechnology Institute (CNRS/University of Toulouse) have [...]

New orientation for gallium nitride on silicon transistors

The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a  French team of researchers [A. Soltani et al, IEEE Electron Device Letters,  published online 7 March 2013]. The team consists of workers from Institut d’Electronique, de Microélectronique et de Nanotechnologie […]

ExCELSiOR Seminar Cycle – ‘Transport experiments in graphene devices, from exfoliated to epitaxial graphene’

February 6th; 14:30 Council room 'Transport experiments in graphene devices, from exfoliated to epitaxial graphene' by Dr Emiliano Pallecchi; Laboratoire de Photonique et de Nanostructures, Marcoussy Key words: Cooling of hot electrons in graphene; GHz Jonshon noise thermometry; electron-acoustic phonons scattering; supercollisions, experiments on devices based on epitaxial graphene; magneto-transport experiments; ARPES measurements; oxygen adsorption [...]

ExCELSiOR Project

ExCELSiOR Nanosciences Characterization Center The kick-off of ExCELSiOR EQUIPEX project has been held in Lille (IEMN-CNRS, campus of the University of Lille1) on last November, 15th 2012. This important event has gathered almost 60 attendees coming from large and small industrial companies (Agilent, Horiba, IBM, Omicron-Oxford Instruments, Rohde & Schwarz, ST-Microelectronics, …), European and National […]