Projet ANR-21-CE24-0001


Dynamic phase transition for nanoelectronics

Correlated materials are highly promising for micro and nanoelectronics, with the possibility to change the state of matter by a short electrical or optical excitation. In particular, the use of the dynamic phase transition observed in canonical narrow gap Mott insulators, which gives rise to specific volatile and non-volatile resistive switching under electric pulses, has been proposed for the realization of ultra-compact artificial neurons.
The NANODYN project aims to achieve a multiscale analysis offered by the use of a multiprobe scanning tunneling microscop coupled to a time resolved optical system, to determine the fundamental properties necessary for the development of basic neuromorphic components at the nanoscale. The project also includes the fabrication and characterisation of Mott insulators single layers in view of future compact neuromorphic devices implementation.

  • The main technological or characterization means that will be necessary to carry out the project:
    Nanoprobe, C-AFM, LT-STM
    MBE, Raman
    Lakeshore probe, Janis probe
  • Flagship projects concerned:
    Neuromorphic technologies


Institut d’Electronique, de Microélectronique et de Nanotechnologie, IEMN

Project leader: P. Diener (Junia ISEN)

B. Grandidier, M. Berthe, X. Wallart, Y. Lambert, I. Lefebvre, K. NKonou, H. Koussir, Y. Chernukha

IMN (Nantes)

B. Corraze, E. Janod, L. Cario, J. Tranchant, MP Besland