Summary:

The main objective is to present the modelling of the properties of semiconductor materials for optoelectronic applications, from telecommunications to photovoltaics. The most important electrical, physical and optical parameters in the operation of components have been studied using parabolic, non-parabolic, k-p and .... models. The modelling is applied both to bulk materials, such as InGaAs, InGaAsN, InGaAsSb, InGaAsBi, etc., and to their nanostructures in order to improve the performance of optoelectronic components such as LEDs, lasers, photodiodes and solar cells. Modelling and simulation have therefore been applied to quantum well structures, nanowires and unconstrained and constrained quantum boxes. Examples of applications on different components will illustrate this work.