The research engineer recruited will join the Microwave Components and Devices (PUISSANCE) group at the IEMN Institute of Electronics, Microelectronics and Nanotechnology. His/her role will be to manufacture large-gap semiconductor-based devices in the Institute's clean room. The candidate will have to work on the various stages of the technological process for manufacturing the devices, which will then have to be electrically characterised.

The material will be grown at the NTU laboratory in Singapore as part of an international collaboration. At the IEMN, the research engineer recruited will be involved in developing the technological process for manufacturing the devices in a clean room and characterising them.

The various stages of the process will be developed and optimised using different approaches:

• Achieving the lowest possible contact resistance to improve the operating frequency of the Gunn diodes.
• Optimisation of trench isolation using two techniques. These are based on chlorine-based RIE / ICP technology for dry etching or N⁺ using different energies and doses.

The diodes will then be electrically characterised:

• Characterisation of the devices using basic DC techniques, such as I-V, C-V, I-V pulses, breakdown voltage, etc. These measurements will also be necessary to obtain feedback for the growth of the material in the NTU laboratory, for the adaptation of the technological process at IEMN and for the adaptation of the physical model (Monte Carlo simulation) carried out in Salamanca.
• Microwave measurements, such as small signal S-parameter measurements and THz characterisations of manufactured devices, to provide information for integrated prototype designs.
• Noise measurements at these frequencies will also provide information on the presence or absence of Gunn oscillation at higher frequencies.

• A doctoral thesis specialising in micro-nanotechnology, with a focus on nanometric components for microwave and THz applications.
• Good experience of component technology in cleanrooms and having successfully completed the various technological stages inherent in the manufacture of semiconductor devices.
• Skills in the physics of semiconductors and their applications.

The candidate will be working as part of an international collaboration with the University of Singapore.

The activity will mainly involve working in a clean room under the supervision of Ms Marie LESECQ, who is in charge of technology-related activities for the "POWER" group. It will also involve taking measurements of the devices produced.

Specific safety training relating to the cleanroom will be provided, as well as an introduction to specific technological techniques for using the various resources available.