PE-CVD cold process
Contact : Christiane LEGRAND
OXFORD Plasmalab 80Plus (new in 2007)
- top electrode RF driven (13.56MHz and 50-400KHz)
- film stress can be controlled by high/low frequency mixing techniques
- silicon nitride, oxide deposition
- gases used : SiH4 in N2, NH3, N2O, N2 and He
- deposition temperature : 100 – 340 °C
- deposition rate : 100 to 650 …/mn
