Gas-source molecular beam epitaxy

The gas source molecular beam epitaxy chamber RIBER 32 P was delivered in 1994. Its main parts are the followings :

element V sources: arsine and phosphine, regulated by mass-flow controllers, one single high temperature injector with vent line
element III sources: gallium, aluminium, indium (two cells)
doping elements : silicon and beryllium
Rheed 35 KeV Staib
residual gas analyser Balzers
main pump: CTI cryogenic pump
second pump: ionic pump 400 l/s
vent line pump: turbomolecular pump
liquid nitrogen continuous flow line Vacuum Barrier