Gas-source molecular beam epitaxy


The gas source molecular beam epitaxy chamber RIBER 32 P was delivered in 1994. Its main parts are the followings :

  • element V sources: arsine and phosphine, regulated by mass-flow controllers, one single high temperature injector with vent line
    element III sources: gallium, aluminium, indium (two cells)
    doping elements : silicon and beryllium
  • Rheed 35 KeV Staib
  • residual gas analyser Balzers
  • main pump: CTI cryogenic pump
  • second pump: ionic pump 400 l/s
  • vent line pump: turbomolecular pump
  • liquid nitrogen continuous flow line Vacuum Barrier


Bâti d'épitaxie à sources gazeuses