Gas-source molecular beam epitaxy
The gas source molecular beam epitaxy chamber RIBER 32 P was delivered in 1994. Its main parts are the followings :
- element V sources: arsine and phosphine, regulated by mass-flow controllers, one single high temperature injector with vent line
element III sources: gallium, aluminium, indium (two cells)
doping elements : silicon and beryllium - Rheed 35 KeV Staib
- residual gas analyser Balzers
- main pump: CTI cryogenic pump
- second pump: ionic pump 400 l/s
- vent line pump: turbomolecular pump
- liquid nitrogen continuous flow line Vacuum Barrier