Hot process LP-CVD

Contact : Marc Dewitte

2 Tempress Furnaces systems with 3 horizontal quartz tubes

Tempress Furnace 1: stack with 3 tubes

Tube 1: Growth layers: wet and dry oxides

  • atmospheric pressure: O2, H2, external torch
  • wafers 2”, 3”
  • gate oxide
  • wet oxide with external torch
  • only on silicon substrates

Tube 2:  Deposition layer LP-CVD, Polysilicon doped or not

  • wafers 2”, 3”
  • N2, SiH4, PH3/H2, BCl3
  • Polysilicon; Polysilicon doped Phosphorus

Tube 3: Deposition layer LP-CVD: LTO oxide doped or not

  • N2, SiH4, 02, BCl3, PH3/SiH4
  • wafers 3”
  • LTO; PSG-LTO; BSG-LTO; BPSG-LTO
  • only on silicon substrates

 

Four Tempress 1

Tempress Furnace 2: stack with 3 tubes

 

Tube 1: Growth layers: wet and dry oxides

  • atmospheric pressure: O2, H2, external torch
  • wafers 2”, 3”, 4”
  • dry oxide
  • wet oxide with external torch
  • anneal until 1100°C
  • only on silicon substrates

Tube 2: Deposition layer LP-CVD: Nitride, oxynitride

  • SiH2Cl2; SiH4; N2O; NH3
  • Si3N4; SixNy; SixNyOz

Tube 3: empty

 

Four Tempress 2

1 High Temperature MPA Furnace

3 types of tubes:

  • Quartz until 1100°C
  • Alumina until 1400°C
  • Pyrex until 500°C

 

 

Gaz:

  • SiH4
  • PH3/H2
  • C2H4
  • N2
  • H2/Ar
  • B2H6/Ar