Hot process LP-CVD
Contact : Marc Dewitte
2 Tempress Furnaces systems with 3 horizontal quartz tubes
Tempress Furnace 1: stack with 3 tubes
Tube 1: Growth layers: wet and dry oxides
- atmospheric pressure: O2, H2, external torch
- wafers 2”, 3”
- gate oxide
- wet oxide with external torch
- only on silicon substrates
Tube 2: Deposition layer LP-CVD, Polysilicon doped or not
- wafers 2”, 3”
- N2, SiH4, PH3/H2, BCl3
- Polysilicon; Polysilicon doped Phosphorus
Tube 3: Deposition layer LP-CVD: LTO oxide doped or not
- N2, SiH4, 02, BCl3, PH3/SiH4
- wafers 3”
- LTO; PSG-LTO; BSG-LTO; BPSG-LTO
- only on silicon substrates
Tempress Furnace 2: stack with 3 tubes
Tube 1: Growth layers: wet and dry oxides
- atmospheric pressure: O2, H2, external torch
- wafers 2”, 3”, 4”
- dry oxide
- wet oxide with external torch
- anneal until 1100°C
- only on silicon substrates
Tube 2: Deposition layer LP-CVD: Nitride, oxynitride
- SiH2Cl2; SiH4; N2O; NH3
- Si3N4; SixNy; SixNyOz
Tube 3: empty
1 High Temperature MPA Furnace
3 types of tubes:
- Quartz until 1100°C
- Alumina until 1400°C
- Pyrex until 500°C
Gaz:
-
SiH4
-
PH3/H2
-
C2H4
-
N2
-
H2/Ar
-
B2H6/Ar