Oxides, nitrides, oxinitrides

Materials
SiO₂, Si₃N₄, Si_xN_y, Al₂O₃, TiN, TiO₂, TiON, LTO, oxynitrides

Synthesis
ALD – 300°C – up to 8 inch wafers : Al₂O₃  (TMAH + H₂O), TiO₂ (TiCl₄ +H₂O)
LPCVD Tempress furnaces- up to 4 inch wafers: LTO (420°C), Si_xN_y, Si₃N₄, oxinitrides (600 to 825°C),
APCVD Tempress furnaces – 850 à 1100°C – up to 4 inch wafers : wet (50 to 2500 nm) or dry SiO₂ (5 to 500 nm)
PECVD – 100 à 340°C – HF 13.56 MHz – 1 Torr – up to 8 inch wafers : Si₃N₄, SiO₂
Sputtering – > 300°C – up to 4 inch wafers : TiN, TiON

Mastering
Complete/ Exploratory for oxinitrides

Applications
Electrical insulator, barrier and passivation layers,  etching support, electrode for 3D µbattery, capacitor

Characterisation
Profilometry, Ellipsometry, SEM, stress, breakdown voltage, roughness

Partnership
Vmicro, EFE