New orientation for gallium nitride on silicon transistors

The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a  French team of researchers [A. Soltani et al, IEEE Electron Device Letters,  published online 7 March 2013]. The team consists of workers from Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN) and Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications (CRHEA).

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Fig.1: Structure of the AlGaN/GaN HEMT on (110) oriented silicon substrate.

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Fig.2: SEM picture of the T-shaped 60 nm gate length fabricated with the nitride-gate technology

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http://www.semiconductor-today.com/news_items/2013/MAR/IEMN_210313.html

Author(s): Soltani, A.
Institute of Electronics, Microelectronics and Nanotechnology, Centre National de Recherche Scientifique (IEMN/CNRS), Villeneuve d’Ascq, France
Gerbedoen, J.-C.; Cordier, Y.; Ducatteau, D.; Rousseau, M.; Chmielowska, M.; Ramdani, M.; De Jaeger, J.-C.

 

ExCELSiOR Seminar Cycle – ‘Transport experiments in graphene devices, from exfoliated to epitaxial graphene’

February 6th; 14:30 Council room

 ‘Transport experiments in graphene devices, from exfoliated to epitaxial graphene’
par Dr Emiliano Pallecchi; Laboratoire de Photonique et de Nanostructures, Marcoussy

Key words: Cooling of hot electrons in graphene; GHz Jonshon noise thermometry; electron-acoustic phonons scattering;
supercollisions,  experiments on devices based on epitaxial graphene; magneto-transport experiments; ARPES measurements;
oxygen adsorption on the electronics properties.

www.excelsior-ncc.eu

ExCELSiOR Project

ExCELSiOR Nanosciences Characterization Center

The kick-off of ExCELSiOR EQUIPEX project has been held in Lille (IEMN-CNRS, campus of the University of Lille1) on last November, 15th 2012. This important event has gathered almost 60 attendees coming from large and small industrial companies (Agilent, Horiba, IBM, Omicron-Oxford Instruments, Rohde & Schwarz, ST-Microelectronics, …), European and National laboratories, National organisms (ANR, CEA, CNRS, DGA, KUL, …) as well as Regional research and training organisms (ISEN, LMCU,  PRES ULNF, Région Nord-Pas-de-Calais …).

The agenda included two invited communications; the first one presented, by Carlo Reita, Director of Research, in charge of advanced nano-electronics program at CEA-Leti-Grenoble, concerned the status of future generations of electronics (2020) and the second communication dealt with new paradigms in near field microscopy and biological matter and has been presented by Jean-Pierre Aimé, Director of Research CNRS-University of Bordeaux. The second part of this day was dedicated to hands-on tour of the new measurement facilities which will establish the European ExCELSiOR Nanosciences Characterization Center.

      

   

Réseau RENATECH : journée des utilisateurs de grandes centrales de micro et nanotechnologies

Cette journée annuelle s’adresse à l’ensemble de la communauté scientifique afin de présenter les principales thématiques de recherche du réseau, ses moyens et compétences technologiques spécifiques ainsi que l’accès aux équipements et les conditions de leur utilisation. Des visites des centrales technologiques RENATECH et des salles blanches seront également proposées. Cette rencontre se déroulera le 19 mars 2012 au sein des laboratoires hébergeurs.

NANO-TEC Workshop 3

NANO-TEC Workshop 3