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editrice2017-06-06 08:25:012018-02-13 13:20:27A magnetoelectric random access memory cell based on the stress-mediated magnetoelectric effect that promises extremely low bit-reading and low bit-writing energies.
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editrice2017-06-06 08:25:012018-02-13 13:20:27A magnetoelectric random access memory cell based on the stress-mediated magnetoelectric effect that promises extremely low bit-reading and low bit-writing energies.
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