Quantum materials represent a broad class of materials in which strong electron interactions give rise to collective quantum electronic effects such as superconductivity, magnetism or resistive switching.
To enhance electronic interactions, we can typically use materials where the atoms have a large number of valence electrons (transition metals), or limit the dimensionality of the crystal to confine the electrons (2D materials, 1D materials, quantum dots).
The properties of quantum materials hold great potential for the development of innovative electronic components. In particular, electrical pulse-induced resistive switching in so-called Mott materials can mimic certain neuromorphic functions: the change in resistance state obtained following a series of electrical pulses is analogous to the response of a biological neuron [1].

One of today’s major challenges is to integrate these materials into the existing large-scale microelectronics industry, based on technologies specific to silicon substrates and III-V semiconductors such as GaAs and GaP. The challenge lies in both manufacturing and controlling the electronic properties of these materials on a large scale.
At the IEMN, an equipment dedicated to the synthesis of chalcogenide materials by molecular jet epitaxy, installed in 2020, has made it possible to fabricate layers of a two-dimensional Mott material discovered in 2021, 1T-TaSe2. Until now, this two-dimensional material, which is difficult to fabricate in crystalline form, had only been obtained on metal substrates. These substrates considerably reduce application possibilities, since they short-circuit the active material. Against this background, the EPIPHY group succeeded in fabricating TaSe2 monolayers on a III-V semiconductor substrate, gallium phosphide. These layers have been multi-scale characterized by the PHYSIQUE group.