Yassine FOUZI

« Design and characterization of GaN based transitors dedicated to high frequency/high power applications »

Advances in studies concerning GaN based High Electron Mobility Transistors (HEMT) have enabled very high power performance for telecommunications, radar and space applications due to the superior properties of the GaN material. An accurate transistor model is therefore the fundamental basis for successful design of high frequency / high power devices. My mission as an engineer within the group is to characterize GaN based power transistors and determine all the key parameters and characteristics, as well as its dispersive effects. The goal of this characterization will also be to achieve a model of the transistor composed of its extrinsic and intrinsic parameters.