Memories that use heat to store information
Electronic components heat up, and this is a source of problems and energy losses. But did you know that some components use heat as a lever to store information? A team from the IEMN is investigating the thermal properties of the so-called ‘phase change’ materials used in these new types of memory. The results are published in the Journal of Applied Physics.
Phase-change memories have a number of advantages, including high miniaturization capacity, low power consumption and the ability to retain their last state after use, hence the term ‘non-volatile’. This very useful property comes from the material used, in our case GeSbTe, a chalcogenide glass with a disordered, electrically insulating phase and conductive crystalline phases. PCM (Phase-Change Memories) use a thin layer of this material and electrodes that heat a nanometric zone of material to make the (reversible) transition between the amorphous and crystalline phases. The information is then stored and read by measuring the electrical resistance of this zone, the ‘memory point’.
This technology, already used in automotive electronics for example, involves considerable challenges in terms of materials engineering, as the memory point locally reaches temperatures more than 600°C during melting. Successfully confining such a release of heat to an area of just a few nanometers over a period of less than a microsecond requires knowledge of the material’s properties, particularly its thermal properties, as a function of temperature. Furthermore, the composition of the material is highly complex and its properties are not always known precisely.
Using the Raman thermometry method, we were able to measure the thermal conductivity of GeSbTe as a function of temperature and its crystallization state. The method uses the measurement of the Raman scattering spectrum, an actual fingerprint of the material that reveals information about its composition and phase. Certain scattering peaks depend on the local temperature and are veritable thermometers that we can calibrate to measure the heating of the material, without contact, using a laser. By analyzing this heating as a function of laser power, we can deduce thermal conductivity.
The advantage of this technique lies in the fact that it allows us to obtain thermal and structural information simultaneously. This study, published in the Journal of Applied Physics, paves the way for the analysis of many other materials used in memories, telecommunications, optics, detectors and many other applications.
Référence:
Thermal characterization of Ge-rich GST thin films for phase change memories by Raman thermometry.
Akash Patil, Yannick Le-Friec, Pascal Roussel, Yves Deblock, Simon Jeannot, Philippe Boivin, Emmanuel Dubois et Jean-François Robillard
Journal of Applied Physics 136, 175102 (2024).
https://doi.org/10.1063/5.0226265
https://hal.science/hal-04764747v1