As part of the PEPR research investment plan for electronics, IEMN has acquired a dual epitaxy reactor for growing semiconductors that are essential for developing devices for very high-speed telecommunications and THz optoelectronics. 
This new system, designed by RIBER, comprises two chambers connected under ultra-high vacuum, allowing both greater control over the properties of epitaxial III-V semiconductor layers and new opportunities for their integration on silicon or for the development of new functionalities based on selective growth at the nanometric scale.

As part of the PEPR Electronics program, and thanks to additional funding from the FEDER, IEMN’s Micro-Nanofabrication Centre has acquired a new dual molecular beam epitaxy reactor. This new system, developed by RIBER, consists of two growth chambers. The first, a C21-DZ type, is equipped with valve crackers as sources of phosphorus, arsenic and antimony, double filament cells for the effusion of III elements (In, Ga and Al), and sources of Si, beryllium and carbon for doping. An EZ Curve system will also measure substrate deflection during growth in order to accurately measure alloy stress and ensure precise composition.