SiGe BiCMOS Technologies – The future for millimeter band applications, today
The millimeter frequency band, between 30 and 300 GHz, is attracting more and more attention in the solid state integrated circuit community with numerous applications. These include medical, security and telecom applications that take advantage of the increased spatial resolution or frequency bandwidth in this frequency range.
Historically, circuits for applications in this frequency band have been designed based on III-V technologies, because silicon-based technologies were not able to meet the noise figure and power. Thanks to the European efforts in the SiGe BiCMOS field, this technology is now able to meet the needs in the millimeter band.
This work  was conducted within the Power and THz teams of the IEMN, in the framework of the TARANTO project which gathered more than 30 European partners from 6 different countries. In , the main milestones of this project are presented, covering a wide range of results, from the design and characterization of heterojunction transistors (HBTs), through circuits to complete telecommunication systems.